Trap generation and breakdown processes in very thin gate oxides

Research output: Contribution to journalArticlepeer-review

Abstract

Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented.

Original languageEnglish (US)
Pages (from-to)625-632
Number of pages8
JournalMicroelectronics Reliability
Volume41
Issue number5
DOIs
StatePublished - May 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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