Trap generation and breakdown processes in very thin gate oxides

Elyse Rosenbaum; Jie Wu

doi:10.1016/S0026-2714(01)00026-9

Trap generation and breakdown processes in very thin gate oxides

Research output: Contribution to journal › Article › peer-review

Abstract

Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented.

Original language	English (US)
Pages (from-to)	625-632
Number of pages	8
Journal	Microelectronics Reliability
Volume	41
Issue number	5
DOIs	https://doi.org/10.1016/S0026-2714(01)00026-9
State	Published - May 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/S0026-2714(01)00026-9

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title = "Trap generation and breakdown processes in very thin gate oxides",

abstract = "Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented.",

author = "Elyse Rosenbaum and Jie Wu",

note = "Funding Information: This work was supported in part by a grant from the Semiconductor Research Corporation under the AMD Custom Research Program. The contributions of our former colleague Professor L.F. Register to the work on stress-induced leakage current are gratefully acknowledged.",

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AU - Rosenbaum, Elyse

AU - Wu, Jie

N1 - Funding Information: This work was supported in part by a grant from the Semiconductor Research Corporation under the AMD Custom Research Program. The contributions of our former colleague Professor L.F. Register to the work on stress-induced leakage current are gratefully acknowledged.

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Y1 - 2001/5

N2 - Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented.

AB - Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented.

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Trap generation and breakdown processes in very thin gate oxides

Abstract

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