Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering