Trap generation and breakdown processes in very thin gate oxides

Research output: Contribution to journalArticle

Abstract

Neutral electron traps are generated in gate oxide during electrical stress, leading to degradation in the form of stress-induced leakage current (SILC) and eventually resulting in breakdown. SILC is the result of inelastic, trap-assisted tunneling of electrons that originate in the conduction band of the cathode. Deuterium annealing experiments call into question the interfacial hydrogen release model of the trap generation mechanism. A framework for modeling time-to-breakdown is presented.

Original languageEnglish (US)
Pages (from-to)625-632
Number of pages8
JournalMicroelectronics Reliability
Volume41
Issue number5
DOIs
StatePublished - May 2001

Fingerprint

Oxides
breakdown
traps
Leakage currents
oxides
leakage
Electron traps
Electron tunneling
Deuterium
Conduction bands
deuterium
Hydrogen
conduction bands
Cathodes
electrons
cathodes
Annealing
degradation
Degradation
annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Trap generation and breakdown processes in very thin gate oxides. / Rosenbaum, Elyse; Wu, Jie.

In: Microelectronics Reliability, Vol. 41, No. 5, 05.2001, p. 625-632.

Research output: Contribution to journalArticle

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