Trap-assisted tunneling current through ultra-thin oxide

J. Wu, L. F. Register, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Based on a consideration of the relative magnitudes of the direct and trap-assisted tunneling probabilities, this work explains why stress-induced leakage current is observed only within a 'window' of oxide thickness. This work also provides further experimental evidence that SILC is due to inelastic trap-assisted tunneling of electrons from the cathode conduction band.

Original languageEnglish (US)
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages389-395
Number of pages7
ISBN (Print)0780352203
StatePublished - Jan 1 1999
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: Mar 23 1999Mar 25 1999

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

OtherProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period3/23/993/25/99

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Wu, J., Register, L. F., & Rosenbaum, E. (1999). Trap-assisted tunneling current through ultra-thin oxide. In Annual Proceedings - Reliability Physics (Symposium) (pp. 389-395). (Annual Proceedings - Reliability Physics (Symposium)). IEEE.