@inproceedings{9bed353013ca4cf09918b00127fe37d9,
title = "Trap-assisted tunneling current through ultra-thin oxide",
abstract = "Based on a consideration of the relative magnitudes of the direct and trap-assisted tunneling probabilities, this work explains why stress-induced leakage current is observed only within a 'window' of oxide thickness. This work also provides further experimental evidence that SILC is due to inelastic trap-assisted tunneling of electrons from the cathode conduction band.",
author = "J. Wu and Register, {L. F.} and E. Rosenbaum",
year = "1999",
language = "English (US)",
isbn = "0780352203",
series = "Annual Proceedings - Reliability Physics (Symposium)",
publisher = "IEEE",
pages = "389--395",
booktitle = "Annual Proceedings - Reliability Physics (Symposium)",
note = "Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium ; Conference date: 23-03-1999 Through 25-03-1999",
}