Transverse mode measurements in index guided vertical cavity semiconductor lasers

John McInerney, Stephen Hegarty, Guillaume Huyet, Pierpaolo Porta, Kent Choquette, Kent Geib, Hong Hou

Research output: Contribution to conferencePaperpeer-review

Abstract

Vertical cavity surface emitting semiconductor lasers (VCSEL) have many applications in information technology, particularly communications and data storage. VCSELs using oxide confinement have generally low lasing thresholds, high efficiencies and excellent electrical properties. The transverse mode properties can be studied in detail. Recent measurements of transverse modes in oxide confined AlGaAs VCSELs of aperture sizes ranging from 1 to 20 μm square are presented.

Original languageEnglish (US)
Number of pages1
StatePublished - 2000
Externally publishedYes
Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
Duration: Sep 10 2000Sep 15 2000

Other

Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
CityNice, France
Period9/10/009/15/00

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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