Abstract
Vertical cavity surface emitting semiconductor lasers (VCSEL) have many applications in information technology, particularly communications and data storage. VCSELs using oxide confinement have generally low lasing thresholds, high efficiencies and excellent electrical properties. The transverse mode properties can be studied in detail. Recent measurements of transverse modes in oxide confined AlGaAs VCSELs of aperture sizes ranging from 1 to 20 μm square are presented.
Original language | English (US) |
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Pages | 233 |
Number of pages | 1 |
State | Published - 2000 |
Externally published | Yes |
Event | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sep 10 2000 → Sep 15 2000 |
Other
Other | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) |
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City | Nice, France |
Period | 9/10/00 → 9/15/00 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering