Abstract
We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 Å was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dVds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1291-1294 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 15 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1997 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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