Transport study in high mobility GaAs/AIGaAs lateral superlattices

M. Hannan; R. W. Giannetta; R. Grundbacher; I. Adesida

doi:10.1116/1.580578

Transport study in high mobility GaAs/AIGaAs lateral superlattices

M. Hannan, R. W. Giannetta, R. Grundbacher, I. Adesida

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 Å was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dV_ds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.

Original language	English (US)
Pages (from-to)	1291-1294
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	15
Issue number	3
DOIs	https://doi.org/10.1116/1.580578
State	Published - 1997

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Transport study in high mobility GaAs/AIGaAs lateral superlattices",

abstract = "We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 {\AA} was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dVds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.",

author = "M. Hannan and Giannetta, {R. W.} and R. Grundbacher and I. Adesida",

year = "1997",

doi = "10.1116/1.580578",

language = "English (US)",

volume = "15",

pages = "1291--1294",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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T1 - Transport study in high mobility GaAs/AIGaAs lateral superlattices

AU - Hannan, M.

AU - Giannetta, R. W.

AU - Grundbacher, R.

AU - Adesida, I.

PY - 1997

Y1 - 1997

N2 - We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 Å was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dVds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.

AB - We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 Å was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dVds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.

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Transport study in high mobility GaAs/AIGaAs lateral superlattices

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