Transport study in high mobility GaAs/AIGaAs lateral superlattices

M. Hannan, Russell W Giannetta, R. Grundbacher, Ilesanmi Adesida

Research output: Contribution to journalArticle


We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 Å was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dVds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.

Original languageEnglish (US)
Pages (from-to)1291-1294
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - Dec 1 1997


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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