Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy

Hanjong Paik, Jarrett A. Moyer, Timothy Spila, Joshua W. Tashman, Julia A. Mundy, Eugene Freeman, Nikhil Shukla, Jason M. Lapano, Roman Engel-Herbert, Willi Zander, Jürgen Schubert, David A. Muller, Suman Datta, Peter Schiffer, Darrell G. Schlom

Research output: Contribution to journalArticlepeer-review


We report the growth of (001)-oriented VO2 films as thin as 1.5nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO2 surface. Another key limitation is interdiffusion with the (001) TiO2 substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO2 films with abrupt MIT behavior.

Original languageEnglish (US)
Article number163101
JournalApplied Physics Letters
Issue number16
StatePublished - Oct 19 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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