Transport measurements and analytical modeling of extraordinary electrical conductance in Ti-GaAs metal-semiconductor hybrid structures

A. K.M. Newaz, Yun Wang, Jian Wu, S. A. Solin, V. R. Kavasseri, I. S. Ahmad, I. Adesida

Research output: Contribution to journalArticle

Abstract

We present a comprehensive study of a phenomenon, extraordinary electroconductance (EEC), in microscopic metal-semiconductor hybrid (MSH) structures at room temperature. Our artificially designed MSH structure shows highly efficient external electric field sensing properties not exhibited by bare semiconductor structures. The microscopic device is fabricated from a GaAs epitaxial layer with a Ti/Au shunt subject to an external electric field and gives a maximum 5.2% EEC effect corresponding to an external electric field resolution of 3.05 V/cm at a bias field of 2.5 kV/cm. Moreover, the study reveals a strong dependence of the transport properties on the geometry of the MSH. An analytical two-layer model is developed which provides good agreement with the experimentally observed data. We propose that scaled down nanoscopic EEC sensor arrays can be used as an imaging technique for the charge distribution on a single cell surface in real time.

Original languageEnglish (US)
Article number195308
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number19
DOIs
StatePublished - May 1 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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