Transmission scanning electron microscopy: Defect observations and image simulations

Patrick G. Callahan; Jean Charles Stinville; Eric R. Yao; McLean P. Echlin; Michael S. Titus; Marc De Graef; Daniel S. Gianola; Tresa M. Pollock

doi:10.1016/j.ultramic.2017.11.004

Transmission scanning electron microscopy: Defect observations and image simulations

Patrick G. Callahan, Jean Charles Stinville, Eric R. Yao, McLean P. Echlin, Michael S. Titus, Marc De Graef, Daniel S. Gianola, Tresa M. Pollock

Research output: Contribution to journal › Article › peer-review

Abstract

The new capabilities of a FEG scanning electron microscope (SEM) equipped with a scanning transmission electron microscopy (STEM) detector for defect characterization have been studied in parallel with transmission electron microscopy (TEM) imaging. Stacking faults and dislocations have been characterized in strontium titanate, a polycrystalline nickel-base superalloy and a single crystal cobalt-base material. Imaging modes that are similar to conventional TEM (CTEM) bright field (BF) and dark field (DF) and STEM are explored, and some of the differences due to the different accelerating voltages highlighted. Defect images have been simulated for the transmission scanning electron microscopy (TSEM) configuration using a scattering matrix formulation, and diffraction contrast in the SEM is discussed in comparison to TEM. Interference effects associated with conventional TEM, such as thickness fringes and bending contours are significantly reduced in TSEM by using a convergent probe, similar to a STEM imaging modality, enabling individual defects to be imaged clearly even in high dislocation density regions. Beyond this, TSEM provides significant advantages for high throughput and dynamic in-situ characterization.

Original language	English (US)
Pages (from-to)	49-61
Number of pages	13
Journal	Ultramicroscopy
Volume	186
DOIs	https://doi.org/10.1016/j.ultramic.2017.11.004
State	Published - Mar 2018
Externally published	Yes

Keywords

STEM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

Online availability

10.1016/j.ultramic.2017.11.004

Library availability

Discover UIUC Full Text

Cite this

@article{2aeb87247a23450fafae6dba1d6917ae,

title = "Transmission scanning electron microscopy: Defect observations and image simulations",

abstract = "The new capabilities of a FEG scanning electron microscope (SEM) equipped with a scanning transmission electron microscopy (STEM) detector for defect characterization have been studied in parallel with transmission electron microscopy (TEM) imaging. Stacking faults and dislocations have been characterized in strontium titanate, a polycrystalline nickel-base superalloy and a single crystal cobalt-base material. Imaging modes that are similar to conventional TEM (CTEM) bright field (BF) and dark field (DF) and STEM are explored, and some of the differences due to the different accelerating voltages highlighted. Defect images have been simulated for the transmission scanning electron microscopy (TSEM) configuration using a scattering matrix formulation, and diffraction contrast in the SEM is discussed in comparison to TEM. Interference effects associated with conventional TEM, such as thickness fringes and bending contours are significantly reduced in TSEM by using a convergent probe, similar to a STEM imaging modality, enabling individual defects to be imaged clearly even in high dislocation density regions. Beyond this, TSEM provides significant advantages for high throughput and dynamic in-situ characterization.",

keywords = "STEM",

author = "Callahan, {Patrick G.} and Stinville, {Jean Charles} and Yao, {Eric R.} and Echlin, {McLean P.} and Titus, {Michael S.} and {De Graef}, Marc and Gianola, {Daniel S.} and Pollock, {Tresa M.}",

note = "Funding Information: The authors gratefully acknowledge the support of ONR Grant N00014-16-1-2982 and GE Global Research and appreciate useful discussions with J. Laflen, A. Loghin and J. Marte. MDG acknowledges financial support from an ONR Vannevar Bush Faculty Fellowship grant # N00014-16-1-2821. The research reported here made use of shared facilities of the UCSB MRSEC (NSF DMR 1720256), a member of the Materials Research Facilities Network ( www.mrfn.org ). Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = mar,

doi = "10.1016/j.ultramic.2017.11.004",

language = "English (US)",

volume = "186",

pages = "49--61",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Transmission scanning electron microscopy

T2 - Defect observations and image simulations

AU - Callahan, Patrick G.

AU - Stinville, Jean Charles

AU - Yao, Eric R.

AU - Echlin, McLean P.

AU - Titus, Michael S.

AU - De Graef, Marc

AU - Gianola, Daniel S.

AU - Pollock, Tresa M.

N1 - Funding Information: The authors gratefully acknowledge the support of ONR Grant N00014-16-1-2982 and GE Global Research and appreciate useful discussions with J. Laflen, A. Loghin and J. Marte. MDG acknowledges financial support from an ONR Vannevar Bush Faculty Fellowship grant # N00014-16-1-2821. The research reported here made use of shared facilities of the UCSB MRSEC (NSF DMR 1720256), a member of the Materials Research Facilities Network ( www.mrfn.org ). Publisher Copyright: © 2017 Elsevier B.V.

PY - 2018/3

Y1 - 2018/3

N2 - The new capabilities of a FEG scanning electron microscope (SEM) equipped with a scanning transmission electron microscopy (STEM) detector for defect characterization have been studied in parallel with transmission electron microscopy (TEM) imaging. Stacking faults and dislocations have been characterized in strontium titanate, a polycrystalline nickel-base superalloy and a single crystal cobalt-base material. Imaging modes that are similar to conventional TEM (CTEM) bright field (BF) and dark field (DF) and STEM are explored, and some of the differences due to the different accelerating voltages highlighted. Defect images have been simulated for the transmission scanning electron microscopy (TSEM) configuration using a scattering matrix formulation, and diffraction contrast in the SEM is discussed in comparison to TEM. Interference effects associated with conventional TEM, such as thickness fringes and bending contours are significantly reduced in TSEM by using a convergent probe, similar to a STEM imaging modality, enabling individual defects to be imaged clearly even in high dislocation density regions. Beyond this, TSEM provides significant advantages for high throughput and dynamic in-situ characterization.

AB - The new capabilities of a FEG scanning electron microscope (SEM) equipped with a scanning transmission electron microscopy (STEM) detector for defect characterization have been studied in parallel with transmission electron microscopy (TEM) imaging. Stacking faults and dislocations have been characterized in strontium titanate, a polycrystalline nickel-base superalloy and a single crystal cobalt-base material. Imaging modes that are similar to conventional TEM (CTEM) bright field (BF) and dark field (DF) and STEM are explored, and some of the differences due to the different accelerating voltages highlighted. Defect images have been simulated for the transmission scanning electron microscopy (TSEM) configuration using a scattering matrix formulation, and diffraction contrast in the SEM is discussed in comparison to TEM. Interference effects associated with conventional TEM, such as thickness fringes and bending contours are significantly reduced in TSEM by using a convergent probe, similar to a STEM imaging modality, enabling individual defects to be imaged clearly even in high dislocation density regions. Beyond this, TSEM provides significant advantages for high throughput and dynamic in-situ characterization.

KW - STEM

UR - http://www.scopus.com/inward/record.url?scp=85038214329&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038214329&partnerID=8YFLogxK

U2 - 10.1016/j.ultramic.2017.11.004

DO - 10.1016/j.ultramic.2017.11.004

M3 - Article

C2 - 29268135

AN - SCOPUS:85038214329

SN - 0304-3991

VL - 186

SP - 49

EP - 61

JO - Ultramicroscopy

JF - Ultramicroscopy

ER -

Transmission scanning electron microscopy: Defect observations and image simulations

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this