Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

F. Tan, R. Bambery, M. Feng, N. Holonyak

Research output: Contribution to journalArticlepeer-review

Abstract

A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f -3dB = 9.8 GHz at 15 °C for I B/I TH = 3.3 and 17 GHz at 0 °C for I B/I TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

Original languageEnglish (US)
Article number061105
JournalApplied Physics Letters
Volume99
Issue number6
DOIs
StatePublished - Aug 8 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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