Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

F. Tan; R. Bambery; M. Feng; N. Holonyak

doi:10.1063/1.3622110

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

F. Tan, R. Bambery, M. Feng, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I _TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ _B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f _-3dB = 9.8 GHz at 15 °C for I _B/I _TH = 3.3 and 17 GHz at 0 °C for I _B/I _TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

Original language	English (US)
Article number	061105
Journal	Applied Physics Letters
Volume	99
Issue number	6
DOIs	https://doi.org/10.1063/1.3622110
State	Published - Aug 8 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3622110

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@article{0ff6ce3befbc4566be12a7a67134e05c,

title = "Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation",

abstract = "A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f -3dB = 9.8 GHz at 15 °C for I B/I TH = 3.3 and 17 GHz at 0 °C for I B/I TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.",

author = "F. Tan and R. Bambery and M. Feng and N. Holonyak",

note = "Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. The authors wish to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support of the Army Research Office, Grant No. W911NF-08-1-0469.",

year = "2011",

month = aug,

day = "8",

doi = "10.1063/1.3622110",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

AU - Tan, F.

AU - Bambery, R.

AU - Feng, M.

AU - Holonyak, N.

N1 - Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. The authors wish to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support of the Army Research Office, Grant No. W911NF-08-1-0469.

PY - 2011/8/8

Y1 - 2011/8/8

N2 - A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f -3dB = 9.8 GHz at 15 °C for I B/I TH = 3.3 and 17 GHz at 0 °C for I B/I TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

AB - A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f -3dB = 9.8 GHz at 15 °C for I B/I TH = 3.3 and 17 GHz at 0 °C for I B/I TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

UR - http://www.scopus.com/inward/record.url?scp=84860404609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860404609&partnerID=8YFLogxK

U2 - 10.1063/1.3622110

DO - 10.1063/1.3622110

M3 - Article

AN - SCOPUS:84860404609

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 061105

ER -

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

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