Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

F. Tan; R. Bambery; M. Feng; N. Holonyak

doi:10.1063/1.3622110

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

F. Tan, R. Bambery, M. Feng, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I _TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ _B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f _-3dB = 9.8 GHz at 15 °C for I _B/I _TH = 3.3 and 17 GHz at 0 °C for I _B/I _TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

Original language	English (US)
Article number	061105
Journal	Applied Physics Letters
Volume	99
Issue number	6
DOIs	https://doi.org/10.1063/1.3622110
State	Published - Aug 8 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3622110

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title = "Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation",

abstract = "A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f -3dB = 9.8 GHz at 15 °C for I B/I TH = 3.3 and 17 GHz at 0 °C for I B/I TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.",

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AU - Tan, F.

AU - Bambery, R.

AU - Feng, M.

AU - Holonyak, N.

PY - 2011/8/8

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N2 - A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f -3dB = 9.8 GHz at 15 °C for I B/I TH = 3.3 and 17 GHz at 0 °C for I B/I TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

AB - A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold I TH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the fast base recombination lifetime (τ B < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f -3dB = 9.8 GHz at 15 °C for I B/I TH = 3.3 and 17 GHz at 0 °C for I B/I TH = 6.4. Under the same bias conditions, simultaneous electrical and optical open-eye signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

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