Data are presented demonstrating continuous wave laser operation at -185 °C of an InP-InAlGaAs-InAlAs double heterojunction bipolar transistor with strained InGaAs quantum wells incorporated in the p -type base region. The laser exhibits a peak wavelength λ∼1544 nm when biased in the forward active mode in the common-emitter configuration. A threshold current IB =10 mA is observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)