@article{24ddab3cd82540fc97a24e6a4ca42b36,
title = "Transistor laser with emission wavelength at 1544 nm",
abstract = "Data are presented demonstrating continuous wave laser operation at -185 °C of an InP-InAlGaAs-InAlAs double heterojunction bipolar transistor with strained InGaAs quantum wells incorporated in the p -type base region. The laser exhibits a peak wavelength λ∼1544 nm when biased in the forward active mode in the common-emitter configuration. A threshold current IB =10 mA is observed.",
author = "F. Dixon and M. Feng and N. Holonyak and Yong Huang and Zhang, {X. B.} and Ryou, {J. H.} and Dupuis, {R. D.}",
note = "Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nanophotonics Technologies, HUNT Center). M. Feng is grateful for the support of the Nick Holonyak, Jr. Chair and N. Holonyak, Jr. for the John Bardeen Chair (Sony). R. D. Dupuis acknowledges the support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",
year = "2008",
month = jul,
day = "14",
doi = "10.1063/1.2958228",
language = "English (US)",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",
}