Transistor laser with emission wavelength at 1544 nm

F. Dixon, M. Feng, N. Holonyak, Yong Huang, X. B. Zhang, J. H. Ryou, R. D. Dupuis

Research output: Contribution to journalArticlepeer-review


Data are presented demonstrating continuous wave laser operation at -185 °C of an InP-InAlGaAs-InAlAs double heterojunction bipolar transistor with strained InGaAs quantum wells incorporated in the p -type base region. The laser exhibits a peak wavelength λ∼1544 nm when biased in the forward active mode in the common-emitter configuration. A threshold current IB =10 mA is observed.

Original languageEnglish (US)
Article number021111
JournalApplied Physics Letters
Issue number2
StatePublished - Jul 14 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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