Transistor laser with 13.5-Gb/s error-free data transmission

Fei Tan; Rohan Bambery; Milton Feng; Nick Holonyak

doi:10.1109/LPT.2014.2328666

Transistor laser with 13.5-Gb/s error-free data transmission

Fei Tan
, Rohan Bambery
, Milton Feng
, Nick Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20 °C is determined to be I_TH = 36 mA at V_CE = 1.5 V from measured transistor laser collector current-voltage (I_C - V_CE) and optical power-voltage (L - V_CE) characteristics. The transistor laser is measured to have a modulation bandwidth f - 3dB = 8.1 GHz for I_B = 75 mA (I_B/I_TH ~ ~2) with a carrier-photon resonance amplitude (~ 4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.

Original language	English (US)
Article number	6827167
Pages (from-to)	1542-1545
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2014.2328666
State	Published - Aug 1 2014

Keywords

Transistor laser
bit error ratio
error-free data transmission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/LPT.2014.2328666

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Cite this

@article{286d038c4f3f40278d4d380bfe360207,

title = "Transistor laser with 13.5-Gb/s error-free data transmission",

abstract = "A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20 °C is determined to be ITH = 36 mA at VCE = 1.5 V from measured transistor laser collector current-voltage (IC - VCE) and optical power-voltage (L - VCE) characteristics. The transistor laser is measured to have a modulation bandwidth f - 3dB = 8.1 GHz for IB = 75 mA (IB/ITH \textasciitilde{} \textasciitilde{}2) with a carrier-photon resonance amplitude (\textasciitilde{} 4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.",

keywords = "Transistor laser, bit error ratio, error-free data transmission",

author = "Fei Tan and Rohan Bambery and Milton Feng and Nick Holonyak",

year = "2014",

month = aug,

day = "1",

doi = "10.1109/LPT.2014.2328666",

language = "English (US)",

volume = "26",

pages = "1542--1545",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "15",

}

TY - JOUR

T1 - Transistor laser with 13.5-Gb/s error-free data transmission

AU - Tan, Fei

AU - Bambery, Rohan

AU - Feng, Milton

AU - Holonyak, Nick

PY - 2014/8/1

Y1 - 2014/8/1

N2 - A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20 °C is determined to be ITH = 36 mA at VCE = 1.5 V from measured transistor laser collector current-voltage (IC - VCE) and optical power-voltage (L - VCE) characteristics. The transistor laser is measured to have a modulation bandwidth f - 3dB = 8.1 GHz for IB = 75 mA (IB/ITH ~ ~2) with a carrier-photon resonance amplitude (~ 4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.

AB - A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20 °C is determined to be ITH = 36 mA at VCE = 1.5 V from measured transistor laser collector current-voltage (IC - VCE) and optical power-voltage (L - VCE) characteristics. The transistor laser is measured to have a modulation bandwidth f - 3dB = 8.1 GHz for IB = 75 mA (IB/ITH ~ ~2) with a carrier-photon resonance amplitude (~ 4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.

KW - Transistor laser

KW - bit error ratio

KW - error-free data transmission

UR - https://www.scopus.com/pages/publications/84904628981

UR - https://www.scopus.com/pages/publications/84904628981#tab=citedBy

U2 - 10.1109/LPT.2014.2328666

DO - 10.1109/LPT.2014.2328666

M3 - Article

AN - SCOPUS:84904628981

SN - 1041-1135

VL - 26

SP - 1542

EP - 1545

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

M1 - 6827167

ER -

Transistor laser with 13.5-Gb/s error-free data transmission

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Keywords

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