Transistor laser with 13.5-Gb/s error-free data transmission

Fei Tan, Rohan Bambery, Milton Feng, Nick Holonyak

Research output: Contribution to journalArticle

Abstract

A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20 °C is determined to be ITH = 36 mA at VCE = 1.5 V from measured transistor laser collector current-voltage (IC - VCE) and optical power-voltage (L - VCE) characteristics. The transistor laser is measured to have a modulation bandwidth f - 3dB = 8.1 GHz for IB = 75 mA (IB/ITH ~ ~2) with a carrier-photon resonance amplitude (~ 4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.

Original languageEnglish (US)
Article number6827167
Pages (from-to)1542-1545
Number of pages4
JournalIEEE Photonics Technology Letters
Volume26
Issue number15
DOIs
StatePublished - Aug 1 2014

Keywords

  • Transistor laser
  • bit error ratio
  • error-free data transmission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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