A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20 °C is determined to be ITH = 36 mA at VCE = 1.5 V from measured transistor laser collector current-voltage (IC - VCE) and optical power-voltage (L - VCE) characteristics. The transistor laser is measured to have a modulation bandwidth f - 3dB = 8.1 GHz for IB = 75 mA (IB/ITH ~ ~2) with a carrier-photon resonance amplitude (~ 4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.
- Transistor laser
- bit error ratio
- error-free data transmission
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering