Abstract
A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20 °C is determined to be ITH = 36 mA at VCE = 1.5 V from measured transistor laser collector current-voltage (IC - VCE) and optical power-voltage (L - VCE) characteristics. The transistor laser is measured to have a modulation bandwidth f - 3dB = 8.1 GHz for IB = 75 mA (IB/ITH ~ ~2) with a carrier-photon resonance amplitude (~ 4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.
Original language | English (US) |
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Article number | 6827167 |
Pages (from-to) | 1542-1545 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 26 |
Issue number | 15 |
DOIs | |
State | Published - Aug 1 2014 |
Keywords
- Transistor laser
- bit error ratio
- error-free data transmission
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering