TY - GEN
T1 - Transistor laser for electronic-photonic integrated circuits
AU - Feng, Milton
AU - Holonyak, Nick
PY - 2013/11/8
Y1 - 2013/11/8
N2 - We have demonstrated the first transistor that simultaneously operated as a transistor and as a laser - the "transistor laser" (2004). The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 100 GHz. Three-port operation expands the use of the transistor laser to electronic-photonic integrated circuits.
AB - We have demonstrated the first transistor that simultaneously operated as a transistor and as a laser - the "transistor laser" (2004). The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 100 GHz. Three-port operation expands the use of the transistor laser to electronic-photonic integrated circuits.
UR - http://www.scopus.com/inward/record.url?scp=84892491054&partnerID=8YFLogxK
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U2 - 10.1109/CSICS.2013.6659247
DO - 10.1109/CSICS.2013.6659247
M3 - Conference contribution
AN - SCOPUS:84892491054
SN - 9781479905836
T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
BT - 2013 IEEE Compound Semiconductor Integrated Circuit Symposium
T2 - 2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013
Y2 - 13 October 2013 through 16 October 2013
ER -