Transistor laser devices and methods

Han Wui Then (Inventor), Nick Holonyak (Inventor), Gabriel Walter (Inventor), Milton Feng (Inventor)

Research output: Patent

Abstract

A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
Original languageEnglish (US)
U.S. patent number7813396
Filing date4/8/09
StatePublished - Oct 12 2010

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