Transient Response in Mesoscopic Devices

Leonard F Register; Umberto Ravaioli; Karl Hess

doi:10.1007/978-1-4757-2124-9_47

Transient Response in Mesoscopic Devices

Leonard F Register, Umberto Ravaioli, Karl Hess

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Preliminary results of a numerical method for modeling translent through steady-state conditions in mesoscopic devices are presented. Here, the time-evolution of n-dimensional carrier wave functions are simulated, rather than corresponding 2n-dimensional density matrices or Wigner functions, to allow more ready simulation in two and three-dimensional devices structures. The primary features of this numerical method are (1) a tight-binding formulation of the quantum mechanical Hamiltonian, (2) near-ideal open boundary conditions, and (3) Crank-Nichols on evaluation of the resulting spatially discrete time-dependent Schrödinger equation. Example mesoscopic device structures considered are a two-dimensional quantum wire and an idealized T-structure based translstor.

Original language	English (US)
Title of host publication	Computational Electronics
Subtitle of host publication	Semiconductor Transport and Device Simulation
Editors	K. Hess, J. P. Leburton, U. Ravaioli
Publisher	Springer
Chapter	47
Pages	235-238
ISBN (Electronic)	9781475721249
ISBN (Print)	9781441951229, 9780792390886
DOIs	https://doi.org/10.1007/978-1-4757-2124-9_47
State	Published - 1991

Publication series

Name	The Springer International Series in Engineering and Computer Science
Volume	113
ISSN (Print)	0893-3405

Keywords

Transient Response
Persistent Oscillation
Resonant Tunneling Diode
Wigner Function

Online availability

10.1007/978-1-4757-2124-9_47

Library availability

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1 Book

Computational Electronics: Semiconductor Transport and Device Simulation
Hess, K. (Editor), Leburton, J. P. (Editor) & Ravaioli, U. (Editor), 1991, Boston: Springer. 268 p. (The Springer International Series in Engineering and Computer Science; vol. 113)
Research output: Book/Report/Conference proceeding › Book

Cite this

Transient Response in Mesoscopic Devices. / Register, Leonard F; Ravaioli, Umberto; Hess, Karl.
Computational Electronics: Semiconductor Transport and Device Simulation. ed. / K. Hess; J. P. Leburton; U. Ravaioli. Springer, 1991. p. 235-238 (The Springer International Series in Engineering and Computer Science; Vol. 113).

Research output: Chapter in Book/Report/Conference proceeding › Chapter

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keywords = "Transient Response, Persistent Oscillation, Resonant Tunneling Diode, Wigner Function",

author = "Register, {Leonard F} and Umberto Ravaioli and Karl Hess",

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doi = "10.1007/978-1-4757-2124-9_47",

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AU - Register, Leonard F

AU - Ravaioli, Umberto

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AB - Preliminary results of a numerical method for modeling translent through steady-state conditions in mesoscopic devices are presented. Here, the time-evolution of n-dimensional carrier wave functions are simulated, rather than corresponding 2n-dimensional density matrices or Wigner functions, to allow more ready simulation in two and three-dimensional devices structures. The primary features of this numerical method are (1) a tight-binding formulation of the quantum mechanical Hamiltonian, (2) near-ideal open boundary conditions, and (3) Crank-Nichols on evaluation of the resulting spatially discrete time-dependent Schrödinger equation. Example mesoscopic device structures considered are a two-dimensional quantum wire and an idealized T-structure based translstor.

KW - Transient Response

KW - Persistent Oscillation

KW - Resonant Tunneling Diode

KW - Wigner Function

U2 - 10.1007/978-1-4757-2124-9_47

DO - 10.1007/978-1-4757-2124-9_47

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SN - 9780792390886

T3 - The Springer International Series in Engineering and Computer Science

SP - 235

EP - 238

BT - Computational Electronics

A2 - Hess, K.

A2 - Leburton, J. P.

A2 - Ravaioli, U.

PB - Springer

ER -

Transient Response in Mesoscopic Devices

Abstract

Publication series

Keywords

Online availability

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Research output

Computational Electronics: Semiconductor Transport and Device Simulation

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