Transient overgrowth of a resistive barrier layer by electrodeposited metal in the presence of additives

M. P. Willis, R. C. Alkire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a novel, high throughput experimental and theoretical technique was developed to extract additive influences on the dualkinetic deposition of a metal onto a foreign substrate based on key transition points in chronopotentiometry curves. A finite difference (FD) 1-D growth mode simulation was developed to predict the overgrowth of an electrodeposited metal onto a resistive substrate in the presence of additives based on the experimental results. The simulations were employed to study thin film overgrowth on the wafer scale. Results indicated that the deposit profile was more uniform over a broader range of deposition rates as the rate on the coalesced deposit (ξCu) decreased. Other key parameters for promoting thin film growth included a low coalescence thickness, high substrate conductivity, and an intermediate applied current.

Original languageEnglish (US)
Title of host publicationECS Trancsactions - Electrochemical Processing in ULSI and MEMS 3
Pages89-103
Number of pages15
Edition8
DOIs
StatePublished - Dec 1 2007
EventElectrochemical Processing in ULSI and MEMS 3 - 211th ECS Meeting - Chicago, IL, United States
Duration: May 8 2007May 9 2007

Publication series

NameECS Transactions
Number8
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherElectrochemical Processing in ULSI and MEMS 3 - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period5/8/075/9/07

ASJC Scopus subject areas

  • Engineering(all)

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