Transient overgrowth of a resistive barrier layer by electrodeposited metal in the presence of additives

In this paper, a novel, high throughput experimental and theoretical technique was developed to extract additive influences on the dualkinetic deposition of a metal onto a foreign substrate based on key transition points in chronopotentiometry curves. A finite difference (FD) 1-D growth mode simulation was developed to predict the overgrowth of an electrodeposited metal onto a resistive substrate in the presence of additives based on the experimental results. The simulations were employed to study thin film overgrowth on the wafer scale. Results indicated that the deposit profile was more uniform over a broader range of deposition rates as the rate on the coalesced deposit (ξ_Cu) decreased. Other key parameters for promoting thin film growth included a low coalescence thickness, high substrate conductivity, and an intermediate applied current.