Transient electrical-thermal Co-simulation in the design of on-chip and 3-D interconnects

Tianjian Lu, Jian Ming Jin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical-thermal co-simulation in the transient regime is developed for the design of on-chip and 3-D interconnects. The co-simulation is based on the finite element method, of which the capability is further extended to efficiently handle large-scale problems by employing the finite element tearing and interconnecting (FETI) method and the FETI-enabled parallel computing.

Original languageEnglish (US)
Title of host publication2015 31st International Review of Progress in Applied Computational Electromagnetics, ACES 2015
PublisherApplied Computational Electromagnetics Society (ACES)
ISBN (Electronic)9780996007818
StatePublished - May 15 2015
Event31st International Review of Progress in Applied Computational Electromagnetics, ACES 2015 - Williamsburg, United States
Duration: Mar 22 2015Mar 26 2015

Publication series

NameAnnual Review of Progress in Applied Computational Electromagnetics
Volume2015-May

Other

Other31st International Review of Progress in Applied Computational Electromagnetics, ACES 2015
CountryUnited States
CityWilliamsburg
Period3/22/153/26/15

Keywords

  • Electrical-thermal Co-simulation
  • Finite element tearing and interconnecting
  • On-chip and 3-D interconnects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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