Transient behavior during film removal in diffusion-controlled plasma etching

Richard C. Alkire, Demetre J. Economou

Research output: Contribution to journalArticlepeer-review

Abstract

A mathematical model is formulated to analyze transient behavior during film removal from closely spaced wafers in a barrel plasma etching reactor. The model incorporates diffusion and simultaneous reactions which include the etching process as well as recombination reactions of both volume and surface types. The analysis relates the effect of geometric and operating variables to process characteristics such as etch uniformity, over-etch exposure, and throughput. Dimensionless system parameters are identified and are used to express computed results in general form. Regions of operating conditions that permit etch uniformity within specified tolerances are found, and optimum settings for inter-wafer spacing and reactor pressure to achieve maximum throughput are calculated.

Original languageEnglish (US)
Pages (from-to)648-656
Number of pages9
JournalJournal of the Electrochemical Society
Volume132
Issue number3
DOIs
StatePublished - Mar 1985

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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