Transfer-Printing of Tunable Porous Silicon Microcavities with Embedded Emitters

Hailong Ning, Neil A. Krueger, Xing Sheng, Hohyun Keum, Chen Zhang, Kent D. Choquette, Xiuling Li, Seok Kim, John A. Rogers, Paul V. Braun

Research output: Contribution to journalArticlepeer-review


Here we demonstrate, via a modified transfer-printing technique, that electrochemically fabricated porous silicon (PSi) distributed Bragg reflectors (DBRs) can serve as the basis of high-quality hybrid microcavities compatible with most forms of photoemitters. Vertical microcavities consisting of an emitter layer sandwiched between 11- and 15-period PSi DBRs were constructed. The emitter layer included a polymer doped with PbS quantum dots, as well as a heterogeneous GaAs thin film. In this structure, the PbS emission was significantly redistributed to a 2.1 nm full-width at half-maximum around 1198 nm, while the PSi/GaAs hybrid microcavity emitted at 902 nm with a sub-nanometer full-width at half-maximum and quality-factor of 1058. Modification of PSi DBRs to include a PSi cavity coupling layer enabled tuning of the total cavity optical thickness. Infiltration of the PSi with Al2O3 by atomic layer deposition globally red-shifted the emission peak of PbS quantum dots up to ∼18 nm (∼0.9 nm per cycle), while introducing a cavity coupling layer with a gradient optical thickness spatially modulated the cavity resonance of the PSi/GaAs hybrid such that there was an ∼30 nm spectral variation in the emission of separate GaAs modules printed ∼3 mm apart.

Original languageEnglish (US)
Pages (from-to)1144-1150
Number of pages7
JournalACS Photonics
Issue number11
StatePublished - Nov 19 2014
Externally publishedYes


  • distributed Bragg reflector
  • gradient refractive index
  • silicon photonics
  • silicon/III-V hybrid
  • vertical cavity emitter

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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