Abstract
This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 °C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ∼100 cm2 /V-s, and negligible influence of resistance at the contacts.
Original language | English (US) |
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Article number | 202101 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 20 |
DOIs | |
State | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)