Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors

Sakulsuk Unarunotai, Yuya Murata, Cesar E. Chialvo, Hoon Sik Kim, Scott MacLaren, Nadya Mason, Ivan Petrov, John A. Rogers

Research output: Contribution to journalArticle

Abstract

This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 °C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ∼100 cm2 /V-s, and negligible influence of resistance at the contacts.

Original languageEnglish (US)
Article number202101
JournalApplied Physics Letters
Volume95
Issue number20
DOIs
StatePublished - Nov 30 2009

Fingerprint

graphene
field effect transistors
wafers
peeling
hole mobility
polyimides
silicon carbides
Raman spectroscopy
gold
atmospheres
annealing
electrodes
silicon
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors. / Unarunotai, Sakulsuk; Murata, Yuya; Chialvo, Cesar E.; Kim, Hoon Sik; MacLaren, Scott; Mason, Nadya; Petrov, Ivan; Rogers, John A.

In: Applied Physics Letters, Vol. 95, No. 20, 202101, 30.11.2009.

Research output: Contribution to journalArticle

Unarunotai, Sakulsuk ; Murata, Yuya ; Chialvo, Cesar E. ; Kim, Hoon Sik ; MacLaren, Scott ; Mason, Nadya ; Petrov, Ivan ; Rogers, John A. / Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors. In: Applied Physics Letters. 2009 ; Vol. 95, No. 20.
@article{a08943d1817a4f0ab9bc7cc623b61d43,
title = "Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors",
abstract = "This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 °C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ∼100 cm2 /V-s, and negligible influence of resistance at the contacts.",
author = "Sakulsuk Unarunotai and Yuya Murata and Chialvo, {Cesar E.} and Kim, {Hoon Sik} and Scott MacLaren and Nadya Mason and Ivan Petrov and Rogers, {John A.}",
year = "2009",
month = "11",
day = "30",
doi = "10.1063/1.3263942",
language = "English (US)",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors

AU - Unarunotai, Sakulsuk

AU - Murata, Yuya

AU - Chialvo, Cesar E.

AU - Kim, Hoon Sik

AU - MacLaren, Scott

AU - Mason, Nadya

AU - Petrov, Ivan

AU - Rogers, John A.

PY - 2009/11/30

Y1 - 2009/11/30

N2 - This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 °C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ∼100 cm2 /V-s, and negligible influence of resistance at the contacts.

AB - This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 °C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ∼100 cm2 /V-s, and negligible influence of resistance at the contacts.

UR - http://www.scopus.com/inward/record.url?scp=70450284546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70450284546&partnerID=8YFLogxK

U2 - 10.1063/1.3263942

DO - 10.1063/1.3263942

M3 - Article

AN - SCOPUS:70450284546

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202101

ER -