Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors

Sakulsuk Unarunotai, Yuya Murata, Cesar E. Chialvo, Hoon Sik Kim, Scott MacLaren, Nadya Mason, Ivan Petrov, John A. Rogers

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Abstract

This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 °C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ∼100 cm2 /V-s, and negligible influence of resistance at the contacts.

Original languageEnglish (US)
Article number202101
JournalApplied Physics Letters
Volume95
Issue number20
DOIs
StatePublished - Nov 30 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Unarunotai, S., Murata, Y., Chialvo, C. E., Kim, H. S., MacLaren, S., Mason, N., Petrov, I., & Rogers, J. A. (2009). Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors. Applied Physics Letters, 95(20), [202101]. https://doi.org/10.1063/1.3263942