Abstract
We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.
| Original language | English (US) |
|---|---|
| Title of host publication | 69th Device Research Conference, DRC 2011 - Conference Digest |
| Pages | 115-116 |
| Number of pages | 2 |
| DOIs | |
| State | Published - Dec 1 2011 |
| Event | 69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011 |
Publication series
| Name | Device Research Conference - Conference Digest, DRC |
|---|---|
| ISSN (Print) | 1548-3770 |
Other
| Other | 69th Device Research Conference, DRC 2011 |
|---|---|
| Country | United States |
| City | Santa Barbara, CA |
| Period | 6/20/11 → 6/22/11 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Towards planar GaAs nanowire array high electron mobility transistor. / Miao, Xin; Li, Xiuling.
69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 115-116 5994442 (Device Research Conference - Conference Digest, DRC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Towards planar GaAs nanowire array high electron mobility transistor
AU - Miao, Xin
AU - Li, Xiuling
PY - 2011/12/1
Y1 - 2011/12/1
N2 - We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.
AB - We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.
UR - http://www.scopus.com/inward/record.url?scp=84863179023&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863179023&partnerID=8YFLogxK
U2 - 10.1109/DRC.2011.5994442
DO - 10.1109/DRC.2011.5994442
M3 - Conference contribution
AN - SCOPUS:84863179023
SN - 9781612842417
T3 - Device Research Conference - Conference Digest, DRC
SP - 115
EP - 116
BT - 69th Device Research Conference, DRC 2011 - Conference Digest
ER -