Towards planar GaAs nanowire array high electron mobility transistor

We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.