Towards planar GaAs nanowire array high electron mobility transistor

Xin Miao; Xiuling Li

doi:10.1109/DRC.2011.5994442

Towards planar GaAs nanowire array high electron mobility transistor

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.

Original language	English (US)
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	115-116
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2011.5994442
State	Published - Dec 1 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	69th Device Research Conference, DRC 2011
Country	United States
City	Santa Barbara, CA
Period	6/20/11 → 6/22/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2011.5994442

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Cite this

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title = "Towards planar GaAs nanowire array high electron mobility transistor",

abstract = "We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.",

author = "Xin Miao and Xiuling Li",

year = "2011",

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doi = "10.1109/DRC.2011.5994442",

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series = "Device Research Conference - Conference Digest, DRC",

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AU - Miao, Xin

AU - Li, Xiuling

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N2 - We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.

AB - We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.

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