Towards planar GaAs nanowire array high electron mobility transistor

Xin Miao, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Number of pages2
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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