Towards planar GaAs nanowire array high electron mobility transistor

Xin Miao, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages115-116
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period6/20/116/22/11

Fingerprint

High electron mobility transistors
Nanowires
Field effect transistors
Doping (additives)
Epitaxial growth
Heterojunctions
Thin films
Catalysts
Processing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Miao, X., & Li, X. (2011). Towards planar GaAs nanowire array high electron mobility transistor. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 115-116). [5994442] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994442

Towards planar GaAs nanowire array high electron mobility transistor. / Miao, Xin; Li, Xiuling.

69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 115-116 5994442 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miao, X & Li, X 2011, Towards planar GaAs nanowire array high electron mobility transistor. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994442, Device Research Conference - Conference Digest, DRC, pp. 115-116, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994442
Miao X, Li X. Towards planar GaAs nanowire array high electron mobility transistor. In 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 115-116. 5994442. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994442
Miao, Xin ; Li, Xiuling. / Towards planar GaAs nanowire array high electron mobility transistor. 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. pp. 115-116 (Device Research Conference - Conference Digest, DRC).
@inproceedings{958c1511ecd8445ba19d8ff92087598f,
title = "Towards planar GaAs nanowire array high electron mobility transistor",
abstract = "We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.",
author = "Xin Miao and Xiuling Li",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/DRC.2011.5994442",
language = "English (US)",
isbn = "9781612842417",
series = "Device Research Conference - Conference Digest, DRC",
pages = "115--116",
booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

}

TY - GEN

T1 - Towards planar GaAs nanowire array high electron mobility transistor

AU - Miao, Xin

AU - Li, Xiuling

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.

AB - We have demonstrated the first planar III-V nanowire (NW) based high electron mobility transistor (NW-HEMT) with self-assembled <110> planar GaAs NWs capped with Si-doped AlGaAs sheath as the channel. In contrast to vertical NW-FETs and post-growth aligned NW-FETs, self-assembled planar NW-FETs are well compatible with planar processing and can be deterministically positioned by patterning the Au catalysts [1][2]. The core-shell NW-HEMT heterostructure leaves the GaAs NWs undoped which avoids the issue of NW doping non-uniformity [3][4]. Therefore, device electrical uniformity can be achieved from uniform NWs because the epitaxial growth of AlGaAs thin film is well understood and controllable both in thickness and doping concentration.

UR - http://www.scopus.com/inward/record.url?scp=84863179023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863179023&partnerID=8YFLogxK

U2 - 10.1109/DRC.2011.5994442

DO - 10.1109/DRC.2011.5994442

M3 - Conference contribution

AN - SCOPUS:84863179023

SN - 9781612842417

T3 - Device Research Conference - Conference Digest, DRC

SP - 115

EP - 116

BT - 69th Device Research Conference, DRC 2011 - Conference Digest

ER -