@inproceedings{e8e2fa67ed7743adb76465d83468c7c6,
title = "Towards high efficiency GaAsP solar cells on (001) GaP/Si",
abstract = "We demonstrate metamorphic 1.66 eV GaAs0.77P0.23 solar cells grown by molecular beam epitaxy on exact (001) GaP/Si templates. Cascading such a cell with a 1.1 eV Si junction enables theoretical efficiencies of > 37% under the AM1.5G spectrum. We optimized the initial GaP growth on pseudomorphic GaP/Si templates to promote maximum strain relaxation with minimal nucleation of new threading dislocations. Electron beam-induced current studies of our cells reveal a threading dislocation density (TDD) of 7.8×106 cm-2, about 18% lower than our prior results on GaP/Si. The lower TDD has contributed to a low bandgap-voltage offset (WOC=EG/q-VOC) of 0.55 V, which is 40 mV lower than our previous report, and represents significant progress for GaAsyP1-y/GaP/Si metamorphic solar cells.",
keywords = "GaAsP, III-V on silicon, metamorphic materials, solar cell",
author = "Yaung, {Kevin Nay} and Lang, {Jordan R.} and Lee, {Minjoo Larry}",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925043",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "831--835",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
address = "United States",
note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
}