Towards a low-power nanophotonic semiconductor amplifier heterogeneously integrated with SOI waveguides

G. Roelkens, O. Raz, W. M.J. Green, S. Assefa, M. Tassaert, S. Keyvaninia, K. Vandoorne, D. Van Thourhout, R. Baets, Y. Vlasov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we propose an optically pumped nanophotonic III-V semiconductor optical amplifier heterogeneously integrated on a silicon-on-insulator waveguide circuit through wafer bonding technology. 10μm long adiabatic tapers allow a full power transfer from the silicon waveguide layer to the III-V membrane. Low-power consumption is expected, given the high optical confinement in the 100nm thick III-V membrane waveguide, making it suitable for intra-chip optical interconnect networks. We report on the design and preliminary characterization of this novel type of high-index contrast nanophotonic device.

Original languageEnglish (US)
Title of host publication2010 7th IEEE International Conference on Group IV Photonics, GFP 2010
Pages16-18
Number of pages3
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 7th IEEE International Conference on Group IV Photonics, GFP 2010 - Beijing, China
Duration: Sep 1 2010Sep 3 2010

Publication series

NameIEEE International Conference on Group IV Photonics GFP
ISSN (Print)1949-2081

Other

Other2010 7th IEEE International Conference on Group IV Photonics, GFP 2010
Country/TerritoryChina
CityBeijing
Period9/1/109/3/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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