Toward Moiré engineering in 2D materials via dislocation theory

Pascal Pochet, Brian C. McGuigan, Johann Coraux, Harley T. Johnson

Research output: Contribution to journalArticlepeer-review

Abstract

We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moiré patterns created by layered 2D materials may be understood as dislocation arrays, and vice versa. The dislocations are of a unique type that we describe as van der Waals dislocations, for which we present a complete geometrical description, connected to both stretch and twist Moiré patterns. A simple computational scheme, which reduces the complexity of the electronic interaction between layers in order to make the problem computationally tractable, is introduced to simulate these dislocation arrays, allowing us to predict and explain all of the observed Moiré patterns in 2D material systems within a unique framework. We extend this analysis as well to defects in Moiré patterns, which have been reported recently, and which are the result of defects of the same symmetry in the constituent 2D material layers. Finally, we show that linear defects in the Moiré space can be viewed as unidimensional topological states, and can be engineered using our framework.

Original languageEnglish (US)
Pages (from-to)240-250
Number of pages11
JournalApplied Materials Today
Volume9
DOIs
StatePublished - Dec 2017

Keywords

  • 2D material
  • Dislocation
  • Moiré pattern
  • Topological state
  • van der Waals interaction

ASJC Scopus subject areas

  • General Materials Science

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