Toward high performance N/P gaas solar cells grown on low dislocation density p-type sige substrates

S. A. Ringel, C. L. Andre, M. K. Hudait, D. M. Wilt, E. B. Clark, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, M. Carroll, M. Erdtmann, J. A. Carlin, B. M. Keyes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAs solar cells grown on SiGe/Si virtual substrates in the n/p configuration are of interest to develop III-V/Si cell technologies with high radiation-tolerance and to demonstrate the general applicability of SiGe/Si substrates for transfer of standard multi-junction configurations. This paper reports the first study of minority carrier electron lifetimes in p-type GaAs base materials grown on low dislocation density (1×10 6 cm -2) SiGe/Si substrates and the first study of n/p III-V cells grown on SiGe as a function of threading dislocation density. Minority carrier diffusion lengths of ∼4 μn, well in excess of a typical n/p cell base thickness, are demonstrated and correlations between diffusion length and dislocation density are made. Preliminary cell results match theoretical predictions, and n/p GaAs cell efficiencies on Si in excess of 15% have been achieved. In parallel developments for p/n cells, GaAs cell areas on SiGe have been increased from 0.36 cm 2 to 4 cm 2 with no decrease in cell performance. This indicates that thermal stress induced microcracks are not limiting cell performance on SiGe/Si substrates at this stage of development. The cumulative impact of these results indicate the growing promise of SiGe virtual substrates for achieving high performance III-V solar cells grown on Si substrates utilizing SiGe buffer layers.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages612-615
Number of pages4
StatePublished - Dec 1 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period5/11/035/18/03

ASJC Scopus subject areas

  • Engineering(all)

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