Titanium and copper in Si: Barriers for diffusion and interactions with hydrogen

David E. Woon, Dennis S. Marynick, Stefan K. Estreicher

Research output: Contribution to journalArticle

Abstract

We present the results of a theoretical study of the diffusion barriers of titanium and copper in crystalline silicon, and of the interactions between titanium and hydrogen, and between copper and hydrogen. The calculations were performed using various molecular clusters and the Hartree-Fock method. The method of partial retention of diatomic differential overlap (PRDDO) predicts diffusion barriers of 3.29 eV for Ti+, 2.25 eV for Ti0, and 0.24 eV for Cu+. PRDDO also predicts that substitutional Ti0 is a deep trap for interstitial H, with a gain in energy of 1.84 eV relative to atomic H far outside the cluster. AB initio Hartree-Fock calculations show that a Ti+ ion at a tetrahedral interstitial site also forms a bond with interstitial H, with a dissociation energy of 2.31 eV. On the other hand, interstitial Cu+ does not form a bond with H. Several issues relevant to H passivation of interstitial 3d transition-metal impurities in Si are discussed.

Original languageEnglish (US)
Pages (from-to)13383-13389
Number of pages7
JournalPhysical Review B
Volume45
Issue number23
DOIs
StatePublished - Jan 1 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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