TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies

S. Kodambaka; V. Petrova; A. Vailionis; P. Desjardins; D. G. Cahill; I. Petrov; J. E. Greene

doi:10.1016/S0040-6090(01)01022-7

TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies

S. Kodambaka, V. Petrova, A. Vailionis, P. Desjardins, D. G. Cahill, I. Petrov, J. E. Greene

Research output: Contribution to journal › Conference article › peer-review

Abstract

In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of two-dimensional TiN islands on atomically-flat TiN(001) and TiN(111) terraces at 750-950°C. The rate-limiting mechanism for island decay was found to be adatom surface-diffusion on (001) and attachment/detachment at step edges on (111) surfaces. We have 2modeled island decay kinetics based upon the Gibbs-Thomson and steady-state diffusion equations to obtain a 001-step edge energy per unit length of 0.23 ± 0.05 eV/Å with an activation energy of 3.4 ± 0.3 eV for adatom formation and diffusion on TiN(001). The activation energy for adatom formation and attachment/detachment on TiN(111) is 3.5 ± 0.3 eV.

Original language	English (US)
Pages (from-to)	164-168
Number of pages	5
Journal	Thin Solid Films
Volume	392
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(01)01022-7
State	Published - Jul 30 2001
Event	3rd International Conference on Coating on Glass (ICCG) - Maastricht, Netherlands Duration: Oct 28 2000 → Nov 2 2000

Keywords

Scanning tunneling microscopy (STM)
Surface diffusion
Surface energy
Titanium nitride

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

Online availability

10.1016/S0040-6090(01)01022-7

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title = "TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies",

abstract = "In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of two-dimensional TiN islands on atomically-flat TiN(001) and TiN(111) terraces at 750-950°C. The rate-limiting mechanism for island decay was found to be adatom surface-diffusion on (001) and attachment/detachment at step edges on (111) surfaces. We have 2modeled island decay kinetics based upon the Gibbs-Thomson and steady-state diffusion equations to obtain a 001-step edge energy per unit length of 0.23 ± 0.05 eV/{\AA} with an activation energy of 3.4 ± 0.3 eV for adatom formation and diffusion on TiN(001). The activation energy for adatom formation and attachment/detachment on TiN(111) is 3.5 ± 0.3 eV.",

keywords = "Scanning tunneling microscopy (STM), Surface diffusion, Surface energy, Titanium nitride",

author = "S. Kodambaka and V. Petrova and A. Vailionis and P. Desjardins and Cahill, {D. G.} and I. Petrov and Greene, {J. E.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the NSF/DARPA VIP Program and the US Department of Energy under contract DEFG02-96ER45439. ; 3rd International Conference on Coating on Glass (ICCG) ; Conference date: 28-10-2000 Through 02-11-2000",

year = "2001",

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doi = "10.1016/S0040-6090(01)01022-7",

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TY - JOUR

T1 - TiN(001) and TiN(111) island coarsening kinetics

T2 - 3rd International Conference on Coating on Glass (ICCG)

AU - Kodambaka, S.

AU - Petrova, V.

AU - Vailionis, A.

AU - Desjardins, P.

AU - Cahill, D. G.

AU - Petrov, I.

AU - Greene, J. E.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the NSF/DARPA VIP Program and the US Department of Energy under contract DEFG02-96ER45439.

PY - 2001/7/30

Y1 - 2001/7/30

N2 - In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of two-dimensional TiN islands on atomically-flat TiN(001) and TiN(111) terraces at 750-950°C. The rate-limiting mechanism for island decay was found to be adatom surface-diffusion on (001) and attachment/detachment at step edges on (111) surfaces. We have 2modeled island decay kinetics based upon the Gibbs-Thomson and steady-state diffusion equations to obtain a 001-step edge energy per unit length of 0.23 ± 0.05 eV/Å with an activation energy of 3.4 ± 0.3 eV for adatom formation and diffusion on TiN(001). The activation energy for adatom formation and attachment/detachment on TiN(111) is 3.5 ± 0.3 eV.

AB - In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of two-dimensional TiN islands on atomically-flat TiN(001) and TiN(111) terraces at 750-950°C. The rate-limiting mechanism for island decay was found to be adatom surface-diffusion on (001) and attachment/detachment at step edges on (111) surfaces. We have 2modeled island decay kinetics based upon the Gibbs-Thomson and steady-state diffusion equations to obtain a 001-step edge energy per unit length of 0.23 ± 0.05 eV/Å with an activation energy of 3.4 ± 0.3 eV for adatom formation and diffusion on TiN(001). The activation energy for adatom formation and attachment/detachment on TiN(111) is 3.5 ± 0.3 eV.

KW - Scanning tunneling microscopy (STM)

KW - Surface diffusion

KW - Surface energy

KW - Titanium nitride

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U2 - 10.1016/S0040-6090(01)01022-7

DO - 10.1016/S0040-6090(01)01022-7

M3 - Conference article

AN - SCOPUS:0035974448

SN - 0040-6090

VL - 392

SP - 164

EP - 168

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

Y2 - 28 October 2000 through 2 November 2000

ER -

TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies

Abstract

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