TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies

S. Kodambaka, V. Petrova, A. Vailionis, P. Desjardins, D. G. Cahill, I. Petrov, J. E. Greene

Research output: Contribution to journalConference articlepeer-review


In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of two-dimensional TiN islands on atomically-flat TiN(001) and TiN(111) terraces at 750-950°C. The rate-limiting mechanism for island decay was found to be adatom surface-diffusion on (001) and attachment/detachment at step edges on (111) surfaces. We have 2modeled island decay kinetics based upon the Gibbs-Thomson and steady-state diffusion equations to obtain a 001-step edge energy per unit length of 0.23 ± 0.05 eV/Å with an activation energy of 3.4 ± 0.3 eV for adatom formation and diffusion on TiN(001). The activation energy for adatom formation and attachment/detachment on TiN(111) is 3.5 ± 0.3 eV.

Original languageEnglish (US)
Pages (from-to)164-168
Number of pages5
JournalThin Solid Films
Issue number2
StatePublished - Jul 30 2001
Event3rd International Conference on Coating on Glass (ICCG) - Maastricht, Netherlands
Duration: Oct 28 2000Nov 2 2000


  • Scanning tunneling microscopy (STM)
  • Surface diffusion
  • Surface energy
  • Titanium nitride

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces


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