Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser

P. Boucaud; F. H. Julien; R. Prazeres; J. M. Ortega; V. Berger; J. Nagle; J. P. Leburton

doi:10.1049/el:19961550

Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser

P. Boucaud, F. H. Julien, R. Prazeres, J. M. Ortega, V. Berger, J. Nagle, J. P. Leburton

Research output: Contribution to journal › Article › peer-review

Abstract

The authors have studied the intersubband relaxation in asymmetric GaAs/AlGaAs coupled quantum wells using a two-colour free electron laser. Three subbands are bound in the conduction band and exhibit two intersubband transitions in the mid-infrared E₁₃ and E₂₃ at 10 and 14.5μm, respectively. To measure the intersubband relaxation time in the E₃ subband, a time-resolved pump and probe experiment is performed in multipass waveguide geometry with the picosecond two-colour free electron laser facility CLIO in Orsay. At room temperature, the first colour is set at 10μm and pumps the E₁₃ intersubband transition while the second colour (14.5μm) probes the E₂₃ intersubband transition. A relaxation time of ∼0.5ps on the third subband is measured. This value is in agreement with theoretical relaxation calculations which take into account interface and slab phonon modes.

Original language	English (US)
Pages (from-to)	2357-2358
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	25
DOIs	https://doi.org/10.1049/el:19961550
State	Published - Dec 5 1996

Keywords

Carrier lifetime
Free elecron lasers
Gallium arsenide
Semiconductor quantum wells

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19961550

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title = "Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser",

abstract = "The authors have studied the intersubband relaxation in asymmetric GaAs/AlGaAs coupled quantum wells using a two-colour free electron laser. Three subbands are bound in the conduction band and exhibit two intersubband transitions in the mid-infrared E13 and E23 at 10 and 14.5μm, respectively. To measure the intersubband relaxation time in the E3 subband, a time-resolved pump and probe experiment is performed in multipass waveguide geometry with the picosecond two-colour free electron laser facility CLIO in Orsay. At room temperature, the first colour is set at 10μm and pumps the E13 intersubband transition while the second colour (14.5μm) probes the E23 intersubband transition. A relaxation time of ∼0.5ps on the third subband is measured. This value is in agreement with theoretical relaxation calculations which take into account interface and slab phonon modes.",

keywords = "Carrier lifetime, Free elecron lasers, Gallium arsenide, Semiconductor quantum wells",

author = "P. Boucaud and Julien, {F. H.} and R. Prazeres and Ortega, {J. M.} and V. Berger and J. Nagle and Leburton, {J. P.}",

year = "1996",

month = dec,

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doi = "10.1049/el:19961550",

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volume = "32",

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T1 - Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser

AU - Boucaud, P.

AU - Julien, F. H.

AU - Prazeres, R.

AU - Ortega, J. M.

AU - Berger, V.

AU - Nagle, J.

AU - Leburton, J. P.

PY - 1996/12/5

Y1 - 1996/12/5

N2 - The authors have studied the intersubband relaxation in asymmetric GaAs/AlGaAs coupled quantum wells using a two-colour free electron laser. Three subbands are bound in the conduction band and exhibit two intersubband transitions in the mid-infrared E13 and E23 at 10 and 14.5μm, respectively. To measure the intersubband relaxation time in the E3 subband, a time-resolved pump and probe experiment is performed in multipass waveguide geometry with the picosecond two-colour free electron laser facility CLIO in Orsay. At room temperature, the first colour is set at 10μm and pumps the E13 intersubband transition while the second colour (14.5μm) probes the E23 intersubband transition. A relaxation time of ∼0.5ps on the third subband is measured. This value is in agreement with theoretical relaxation calculations which take into account interface and slab phonon modes.

AB - The authors have studied the intersubband relaxation in asymmetric GaAs/AlGaAs coupled quantum wells using a two-colour free electron laser. Three subbands are bound in the conduction band and exhibit two intersubband transitions in the mid-infrared E13 and E23 at 10 and 14.5μm, respectively. To measure the intersubband relaxation time in the E3 subband, a time-resolved pump and probe experiment is performed in multipass waveguide geometry with the picosecond two-colour free electron laser facility CLIO in Orsay. At room temperature, the first colour is set at 10μm and pumps the E13 intersubband transition while the second colour (14.5μm) probes the E23 intersubband transition. A relaxation time of ∼0.5ps on the third subband is measured. This value is in agreement with theoretical relaxation calculations which take into account interface and slab phonon modes.

KW - Carrier lifetime

KW - Free elecron lasers

KW - Gallium arsenide

KW - Semiconductor quantum wells

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JO - Electronics Letters

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Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser

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