Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition

Xiuling Li, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

Abstract

We have investigated the low energy electron beam irradiation (LEEBI) annealing kinetics of Mg-doped GaN films grown by metalorganic chemical vapor deposition. Our results show that LEEBI annealing at room temperature, monitored by cathodoluminescence spectroscopy as a function of irradiation time, occurs rapidly initially and then proceeds gradually until saturation. We have also demonstrated that LEEBI annealing is effective even at liquid helium temperature, indicating its athermal mechanism. Our observations support the dynamic model involving electronically stimulated dissociation of Mg-H bonds and the escaping and retrapping of atomic hydrogens.

Original languageEnglish (US)
Pages (from-to)1605-1607
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number11
DOIs
StatePublished - Sep 9 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this