Time-dependent snapback in thin-film SOI MOSFET's

Prasun Raha, James W. Miller, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

During pulsed stressing of SOI MOSFET's for ESD characterization, the turn-on voltage of the parasitic bipolar transistor was observed to be a function of the stress pulse-width. This observation can be understood in terms of a capacitive charging model. The theory behind this time-dependent snapback is presented in this letter along with the experimental results. Comparisons with bulk-Si devices indicate that this phenomenon is specific to SOI and is a manifestation of the floating body effect.

Original languageEnglish (US)
Pages (from-to)509-511
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number11
DOIs
StatePublished - Nov 1 1997

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Bipolar transistors
Thin films
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Time-dependent snapback in thin-film SOI MOSFET's. / Raha, Prasun; Miller, James W.; Rosenbaum, Elyse.

In: IEEE Electron Device Letters, Vol. 18, No. 11, 01.11.1997, p. 509-511.

Research output: Contribution to journalArticle

Raha, Prasun ; Miller, James W. ; Rosenbaum, Elyse. / Time-dependent snapback in thin-film SOI MOSFET's. In: IEEE Electron Device Letters. 1997 ; Vol. 18, No. 11. pp. 509-511.
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