During pulsed stressing of SOI MOSFET's for ESD characterization, the turn-on voltage of the parasitic bipolar transistor was observed to be a function of the stress pulse-width. This observation can be understood in terms of a capacitive charging model. The theory behind this time-dependent snapback is presented in this letter along with the experimental results. Comparisons with bulk-Si devices indicate that this phenomenon is specific to SOI and is a manifestation of the floating body effect.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering