Time-dependent snapback in thin-film SOI MOSFET's

Prasun Raha, James W. Miller, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

During pulsed stressing of SOI MOSFET's for ESD characterization, the turn-on voltage of the parasitic bipolar transistor was observed to be a function of the stress pulse-width. This observation can be understood in terms of a capacitive charging model. The theory behind this time-dependent snapback is presented in this letter along with the experimental results. Comparisons with bulk-Si devices indicate that this phenomenon is specific to SOI and is a manifestation of the floating body effect.

Original languageEnglish (US)
Pages (from-to)509-511
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number11
DOIs
StatePublished - Nov 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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