Tilted-charge high speed (7 GHz) light emitting diode

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak

Research output: Contribution to journalArticlepeer-review


We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n -type buried "drain" layer beneath the p -type "base" quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only "fast" recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.

Original languageEnglish (US)
Article number231125
JournalApplied Physics Letters
Issue number23
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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