Tilted-charge high speed (7 GHz) light emitting diode

G. Walter; C. H. Wu; H. W. Then; M. Feng; N. Holonyak

doi:10.1063/1.3154565

Tilted-charge high speed (7 GHz) light emitting diode

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n -type buried "drain" layer beneath the p -type "base" quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only "fast" recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.

Original language	English (US)
Article number	231125
Journal	Applied Physics Letters
Volume	94
Issue number	23
DOIs	https://doi.org/10.1063/1.3154565
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3154565

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title = "Tilted-charge high speed (7 GHz) light emitting diode",

abstract = "We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n -type buried {"}drain{"} layer beneath the p -type {"}base{"} quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only {"}fast{"} recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.",

author = "G. Walter and Wu, {C. H.} and Then, {H. W.} and M. Feng and N. Holonyak",

note = "Funding Information: N.H.J. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M.F. for the support of the N.H.J. Chair of Electrical and Computer Engineering. G.W. is grateful for the support of the Brain Gain Malaysia Diaspora (MOSTI) Program. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office, Grant No. W911NF-08-1-0469. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

doi = "10.1063/1.3154565",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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AU - Walter, G.

AU - Wu, C. H.

AU - Then, H. W.

AU - Feng, M.

AU - Holonyak, N.

N1 - Funding Information: N.H.J. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M.F. for the support of the N.H.J. Chair of Electrical and Computer Engineering. G.W. is grateful for the support of the Brain Gain Malaysia Diaspora (MOSTI) Program. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office, Grant No. W911NF-08-1-0469. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009

Y1 - 2009

N2 - We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n -type buried "drain" layer beneath the p -type "base" quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only "fast" recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.

AB - We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n -type buried "drain" layer beneath the p -type "base" quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only "fast" recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.

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ER -

Tilted-charge high speed (7 GHz) light emitting diode

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