Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Liang Wang; Ilesanmi Adesida; Amir M. Dabiran; Andrew M. Wowchak; Peter P. Chow

doi:10.1063/1.2964204

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Liang Wang
, Ilesanmi Adesida
, Amir M. Dabiran
, Andrew M. Wowchak
, Peter P. Chow

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical and microstructural characterizations of the Ti/Al/Mo/Au Ohmic contacts to ultrathin AlN/GaN heterostructures were carried out. It was found that as-deposited contacts had linear I-V behavior due to high tunneling current across the thin AlN barrier. A contact resistance of 0.455 mm was obtained for samples annealed at 800 °C without any premetallization plasma treatment. Transmission electron microscopy studies showed that despite the use of Ti, the AlN layer remained intact. Mushroom-shaped TiN protrusions were formed only along threading dislocations, which terminated in the AlN layer. The TiN protrusions acted as metal plugs/spikes thereby aiding carrier transport.

Original language	English (US)
Article number	032109
Journal	Applied Physics Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.2964204
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2964204

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title = "Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors",

abstract = "Electrical and microstructural characterizations of the Ti/Al/Mo/Au Ohmic contacts to ultrathin AlN/GaN heterostructures were carried out. It was found that as-deposited contacts had linear I-V behavior due to high tunneling current across the thin AlN barrier. A contact resistance of 0.455 mm was obtained for samples annealed at 800 °C without any premetallization plasma treatment. Transmission electron microscopy studies showed that despite the use of Ti, the AlN layer remained intact. Mushroom-shaped TiN protrusions were formed only along threading dislocations, which terminated in the AlN layer. The TiN protrusions acted as metal plugs/spikes thereby aiding carrier transport.",

author = "Liang Wang and Ilesanmi Adesida and Dabiran, \{Amir M.\} and Wowchak, \{Andrew M.\} and Chow, \{Peter P.\}",

note = "This work was supported by ONR Grant N000140610449 (Monitor: Paul Maki). The work at SVTA was partially supported by the U.S. Department of Defense Grant W911NF-06-C-0190. TEM works were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.",

year = "2008",

doi = "10.1063/1.2964204",

language = "English (US)",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

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T1 - Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

AU - Wang, Liang

AU - Adesida, Ilesanmi

AU - Dabiran, Amir M.

AU - Wowchak, Andrew M.

AU - Chow, Peter P.

N1 - This work was supported by ONR Grant N000140610449 (Monitor: Paul Maki). The work at SVTA was partially supported by the U.S. Department of Defense Grant W911NF-06-C-0190. TEM works were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.

PY - 2008

Y1 - 2008

N2 - Electrical and microstructural characterizations of the Ti/Al/Mo/Au Ohmic contacts to ultrathin AlN/GaN heterostructures were carried out. It was found that as-deposited contacts had linear I-V behavior due to high tunneling current across the thin AlN barrier. A contact resistance of 0.455 mm was obtained for samples annealed at 800 °C without any premetallization plasma treatment. Transmission electron microscopy studies showed that despite the use of Ti, the AlN layer remained intact. Mushroom-shaped TiN protrusions were formed only along threading dislocations, which terminated in the AlN layer. The TiN protrusions acted as metal plugs/spikes thereby aiding carrier transport.

AB - Electrical and microstructural characterizations of the Ti/Al/Mo/Au Ohmic contacts to ultrathin AlN/GaN heterostructures were carried out. It was found that as-deposited contacts had linear I-V behavior due to high tunneling current across the thin AlN barrier. A contact resistance of 0.455 mm was obtained for samples annealed at 800 °C without any premetallization plasma treatment. Transmission electron microscopy studies showed that despite the use of Ti, the AlN layer remained intact. Mushroom-shaped TiN protrusions were formed only along threading dislocations, which terminated in the AlN layer. The TiN protrusions acted as metal plugs/spikes thereby aiding carrier transport.

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U2 - 10.1063/1.2964204

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

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