Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Liang Wang, Ilesanmi Adesida, Amir M. Dabiran, Andrew M. Wowchak, Peter P. Chow

Research output: Contribution to journalArticle

Abstract

Electrical and microstructural characterizations of the Ti/Al/Mo/Au Ohmic contacts to ultrathin AlN/GaN heterostructures were carried out. It was found that as-deposited contacts had linear I-V behavior due to high tunneling current across the thin AlN barrier. A contact resistance of 0.455 mm was obtained for samples annealed at 800 °C without any premetallization plasma treatment. Transmission electron microscopy studies showed that despite the use of Ti, the AlN layer remained intact. Mushroom-shaped TiN protrusions were formed only along threading dislocations, which terminated in the AlN layer. The TiN protrusions acted as metal plugs/spikes thereby aiding carrier transport.

Original languageEnglish (US)
Article number032109
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
StatePublished - Aug 4 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Wang, L., Adesida, I., Dabiran, A. M., Wowchak, A. M., & Chow, P. P. (2008). Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors. Applied Physics Letters, 93(3), [032109]. https://doi.org/10.1063/1.2964204