Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories

J. S. De Sousa, A. V. Thean, J. P. Leburton, V. N. Freire

Research output: Contribution to journalArticle

Abstract

A numerical model to calculate the tunneling time from the channel of a metal-oxide-semiconductor device into a silicon nanocrystal embedded in SiO 2 is presented. Self-consistent simulations of the Kohn-Sham and Poisson equations are performed to study the role of the size, shape, barrier thickness of a quantum dot (QD). We found that the charging process is very sensitive to the shape of the QD, resulting in changes of several orders of magnitude in the electron transfer and retention times.

Original languageEnglish (US)
Pages (from-to)6182-6187
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number10
DOIs
StatePublished - Nov 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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