We study the hyperfine interaction in the Kane solid-state quantum computer device structure [Nature (London) 393, 133 (1998)] by solving self-consistently three-dimensional Poisson and Kohn-Sham equations and taking into account the nonisotropic effective mass at each of the six degenerate minima in the silicon conduction band. Specifically, we calculate the hyperfine interaction coefficient from the electron wave-function solution within the envelope function approximation and investigate its variations as a function of gate voltages and impurity position. In addition, we also consider the effect of the gate design on the hyperfine interaction modulation. We show that the hyperfine interaction between the donor electron and donor nucleus is extremely sensitive to all these parameters.
ASJC Scopus subject areas
- Physics and Astronomy(all)