Three-dimensional self-consistent simulation of single-qubit operation by modulation of the hyperfine interaction in phosphors-doped metal-oxide- semiconductor structure

M. Lu, D. V. Melnikov, I. J. Chung, J. P. Leburton

Research output: Contribution to journalArticle

Abstract

We study the hyperfine interaction in the Kane solid-state quantum computer device structure [Nature (London) 393, 133 (1998)] by solving self-consistently three-dimensional Poisson and Kohn-Sham equations and taking into account the nonisotropic effective mass at each of the six degenerate minima in the silicon conduction band. Specifically, we calculate the hyperfine interaction coefficient from the electron wave-function solution within the envelope function approximation and investigate its variations as a function of gate voltages and impurity position. In addition, we also consider the effect of the gate design on the hyperfine interaction modulation. We show that the hyperfine interaction between the donor electron and donor nucleus is extremely sensitive to all these parameters.

Original languageEnglish (US)
Article number093704
JournalJournal of Applied Physics
Volume98
Issue number9
DOIs
StatePublished - Nov 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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