Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging

Kevin Nay Yaung, Stefan Kirnstoetter, Joseph Faucher, Andy Gerger, Anthony Lochtefeld, Allen Barnett, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Accurate and rapid threading dislocation density (TDD) characterization of III–V photovoltaic materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs measured using ECCI showed close agreement with those from electron beam-induced current mapping (EBIC) and defect selective etching (DSE). ECCI is shown to be well-suited for measuring TDD values over a range of ~5×106–5×108 cm−2. ECCI can distinguish individual dislocations in clusters closer than 0.2 µm, highlighting its excellent spatial resolution compared to DSE and EBIC. Taken together, ECCI is shown to be a versatile and complementary method to rapidly quantify TDD in III–V solar cells.

Original languageEnglish (US)
Pages (from-to)65-70
Number of pages6
JournalJournal of Crystal Growth
Volume453
DOIs
StatePublished - Nov 1 2016

Keywords

  • A1. Characterization
  • A1. Defects
  • A3. Molecular beam epitaxy
  • B2. Semiconducting III–V materials
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging'. Together they form a unique fingerprint.

Cite this