Thin-film materials and minimum thermal conductivity

S. M. Lee; George Matamis; David G. Cahill; W. P. Allen

doi:10.1080/108939598200088

Thin-film materials and minimum thermal conductivity

S. M. Lee, George Matamis, David G. Cahill, W. P. Allen

Research output: Contribution to journal › Article › peer-review

Abstract

The theoretical minimum thermal conductivity can be used to model heat transport in a wide variety of bulk and thin-film materials with strong atomic-scale disorder. To explore the possibility of using metastable microstructures in thin-film materials to achieve significant reductions in conductivity, we present experimental results - obtained using the 3ω method in the temperature range 77-400 K - on two novel systems. (1) The thermal conductivity of a low-dielectric-constant "flowable oxide" (HSiO_1.5, hydrogen silsesquioxane) is greatly reduced relative to SiO₂. (2) The thermal conductivity of stabilized zirconia /SiO₂ multilayers is unchanged by solid-solid interfaces separated by nanometer length scales.

Original language	English (US)
Pages (from-to)	31-36
Number of pages	6
Journal	Microscale Thermophysical Engineering
Volume	2
Issue number	1
DOIs	https://doi.org/10.1080/108939598200088
State	Published - Feb 1 1998

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science (miscellaneous)
Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Physics and Astronomy (miscellaneous)

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10.1080/108939598200088

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title = "Thin-film materials and minimum thermal conductivity",

abstract = "The theoretical minimum thermal conductivity can be used to model heat transport in a wide variety of bulk and thin-film materials with strong atomic-scale disorder. To explore the possibility of using metastable microstructures in thin-film materials to achieve significant reductions in conductivity, we present experimental results - obtained using the 3ω method in the temperature range 77-400 K - on two novel systems. (1) The thermal conductivity of a low-dielectric-constant {"}flowable oxide{"} (HSiO1.5, hydrogen silsesquioxane) is greatly reduced relative to SiO2. (2) The thermal conductivity of stabilized zirconia /SiO2 multilayers is unchanged by solid-solid interfaces separated by nanometer length scales.",

author = "Lee, {S. M.} and George Matamis and Cahill, {David G.} and Allen, {W. P.}",

note = "Funding Information: This work was supporte d by National Scie nce Foundation grant CTS-9421089. Sample characterization was carrie d out in the Cente r for Microanalysis of Materials, University of Illinois, which is supporte d by the U.S. Departm ent of E nergy unde r grant DEFG02-96-ER45439. We thank N. Taylor for RBS me asure ments, P. Desjardins for X-ray re flectivity, V. Petrova for SEM data, M. Mangriotis for sputter deposition of metallization, and H.-C.Liou s Dow Corning. for supplying Si wafers coated with FOx.",

year = "1998",

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doi = "10.1080/108939598200088",

language = "English (US)",

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AU - Lee, S. M.

AU - Matamis, George

AU - Cahill, David G.

AU - Allen, W. P.

N1 - Funding Information: This work was supporte d by National Scie nce Foundation grant CTS-9421089. Sample characterization was carrie d out in the Cente r for Microanalysis of Materials, University of Illinois, which is supporte d by the U.S. Departm ent of E nergy unde r grant DEFG02-96-ER45439. We thank N. Taylor for RBS me asure ments, P. Desjardins for X-ray re flectivity, V. Petrova for SEM data, M. Mangriotis for sputter deposition of metallization, and H.-C.Liou s Dow Corning. for supplying Si wafers coated with FOx.

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Y1 - 1998/2/1

N2 - The theoretical minimum thermal conductivity can be used to model heat transport in a wide variety of bulk and thin-film materials with strong atomic-scale disorder. To explore the possibility of using metastable microstructures in thin-film materials to achieve significant reductions in conductivity, we present experimental results - obtained using the 3ω method in the temperature range 77-400 K - on two novel systems. (1) The thermal conductivity of a low-dielectric-constant "flowable oxide" (HSiO1.5, hydrogen silsesquioxane) is greatly reduced relative to SiO2. (2) The thermal conductivity of stabilized zirconia /SiO2 multilayers is unchanged by solid-solid interfaces separated by nanometer length scales.

AB - The theoretical minimum thermal conductivity can be used to model heat transport in a wide variety of bulk and thin-film materials with strong atomic-scale disorder. To explore the possibility of using metastable microstructures in thin-film materials to achieve significant reductions in conductivity, we present experimental results - obtained using the 3ω method in the temperature range 77-400 K - on two novel systems. (1) The thermal conductivity of a low-dielectric-constant "flowable oxide" (HSiO1.5, hydrogen silsesquioxane) is greatly reduced relative to SiO2. (2) The thermal conductivity of stabilized zirconia /SiO2 multilayers is unchanged by solid-solid interfaces separated by nanometer length scales.

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Thin-film materials and minimum thermal conductivity

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