TY - GEN
T1 - Thin-Film Lithium Niobate Acoustic Delay Line Oscillators
AU - Li, Ming Huang
AU - Lu, Ruochen
AU - Manzaneque, Tomas
AU - Gong, Songbin
N1 - The authors would like to thank the DARPA NZero program, the NSF SpecEES program (Grant 1824320) and the Young Scholar Fellowship Program of Ministry of Science and Technology of Taiwan (MOST 108-2636-E-007-014) for funding support.
PY - 2020/1
Y1 - 2020/1
N2 - In this work, thin-film lithium niobate (LiNbO3) acoustic delay line (ADL) based oscillators are experimentally investigated for the first time for the application of single-mode oscillators and frequency comb generation. The design space for the ADL-based oscillator is first analyzed, illustrating that the key to low phase noise lies in high center frequency (fo), large delay (τ G), and low insertion loss (IL) of the delay. Therefore, two self-sustained oscillators employing low noise amplifiers (LNA) and a low IL, long delay (fo=157MHz, IL =2.9dB, τG= 200-440ns) SH0 mode ADLs are designed for a case study. The two SH0 ADL oscillators show measured phase noise of -109 dBc/Hz and -127 dBc/Hz at 10-kHz offset while consuming 16 mA and 48 mA supply currents, respectively. Although the carrier power of the proposed oscillator is lower than published state-of-the-art ADL oscillators, competitive phase noise performance is still attained thanks to the low IL. Finally, frequency comb generation is also demonstrated with the same delay line and a commercial RF feedback amplifier, showing a comb spacing of 3.4 MHz that matches the open-loop characterization.
AB - In this work, thin-film lithium niobate (LiNbO3) acoustic delay line (ADL) based oscillators are experimentally investigated for the first time for the application of single-mode oscillators and frequency comb generation. The design space for the ADL-based oscillator is first analyzed, illustrating that the key to low phase noise lies in high center frequency (fo), large delay (τ G), and low insertion loss (IL) of the delay. Therefore, two self-sustained oscillators employing low noise amplifiers (LNA) and a low IL, long delay (fo=157MHz, IL =2.9dB, τG= 200-440ns) SH0 mode ADLs are designed for a case study. The two SH0 ADL oscillators show measured phase noise of -109 dBc/Hz and -127 dBc/Hz at 10-kHz offset while consuming 16 mA and 48 mA supply currents, respectively. Although the carrier power of the proposed oscillator is lower than published state-of-the-art ADL oscillators, competitive phase noise performance is still attained thanks to the low IL. Finally, frequency comb generation is also demonstrated with the same delay line and a commercial RF feedback amplifier, showing a comb spacing of 3.4 MHz that matches the open-loop characterization.
KW - MEMS
KW - acoustic delay lines
KW - lithium niobate
KW - oscillator
KW - phase noise
KW - piezoelectric transducers
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U2 - 10.1109/MEMS46641.2020.9056259
DO - 10.1109/MEMS46641.2020.9056259
M3 - Conference contribution
AN - SCOPUS:85082988339
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 1285
EP - 1288
BT - 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Y2 - 18 January 2020 through 22 January 2020
ER -