THIN FILM KINETICS AND REACTIONS AT METAL-SILICON INTERFACES.

R. J. Nemanich, B. L. Stafford, John R Abelson, T. W. Sigmon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Raman scattering and RBS measurements are used to characterize the initial interactions at metal-Si interfaces. The results indicate that for some metals, a disordered intermixed layer can precede the formation of an ordered silicide. The results are discussed in terms of the chemical energy and strain which result from the interdiffusion.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsJames D. Chadi, Walter A. Harrison
PublisherSpringer-Verlag
Pages155-158
Number of pages4
ISBN (Print)0387961089
StatePublished - 1985
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nemanich, R. J., Stafford, B. L., Abelson, J. R., & Sigmon, T. W. (1985). THIN FILM KINETICS AND REACTIONS AT METAL-SILICON INTERFACES. In J. D. Chadi, & W. A. Harrison (Eds.), Unknown Host Publication Title (pp. 155-158). Springer-Verlag.