Raman scattering and RBS measurements are used to characterize the initial interactions at metal-Si interfaces. The results indicate that for some metals, a disordered intermixed layer can precede the formation of an ordered silicide. The results are discussed in terms of the chemical energy and strain which result from the interdiffusion.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Editors||James D. Chadi, Walter A. Harrison|
|Number of pages||4|
|State||Published - 1985|
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