Keyphrases
Silicon Nitride
100%
High Electron Mobility Transistor
100%
AlGaN-GaN
100%
Nitride Passivation
100%
Metal-insulator-semiconductor
100%
Multilayer Dielectric
100%
Room Temperature
40%
High Temperature
20%
Gate Dielectric
20%
Process Optimization
20%
Channel Length
20%
Drain Current
20%
Thermal Stress
20%
Thermal Stability
20%
High Transconductance
20%
Circular Structures
20%
Maximum Transconductance
20%
DC Characteristics
20%
Lifetime Measurement
20%
Threshold Voltage
20%
Off-state
20%
High Temperature Operation
20%
Silicon Oxynitride (SiON)
20%
Al2O3-SiO2
20%
On-state Drain Current
20%
Engineering
Room Temperature
100%
Nitride
100%
Dielectrics
100%
Current Drain
100%
Passivation
100%
Gate Dielectric
50%
Optimized Process
50%
Channel Length
50%
Thermal Stress
50%
Lifetime Measurement
50%
High Temperature Operations
50%
Chemistry
Multilayer
100%
Dielectric Material
100%
Silicon
100%
Nitride
100%
Chemical Passivation
100%
Electron Mobility
100%
Ambient Reaction Temperature
40%
Transconductance
40%
Drain Current
40%
Thermal Stability
20%
Material Science
Transistor
100%
Dielectric Material
100%
Electron Mobility
100%
Silicon Nitride
100%
Al2O3
20%
Thermal Stability
20%
Thermal Stress
20%