Thermal transport in rough silicon nanowires for thermoelectric applications

Sanjiv Sinha; Bair Budhaev; Arun Majumdar

doi:10.1557/proc-1166-n04-07

Thermal transport in rough silicon nanowires for thermoelectric applications

Sanjiv Sinha, Bair Budhaev, Arun Majumdar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The coefficient of merit, ZT of nanostructured thermoelectric materials increases with reduction in thermal conductivity through phonon scattering. The ideal thermoelectric is considered to be an electron crystal and a phonon glass. This paper explores such a material concept by developing a theory for phonon localization in rough nanowires with crystalline cores. Results based on this theory suggest that the reported hundredfold decrease in thermal conductivity of rough silicon nanowires arises due to multiply scattered and localized phonons. Phonon localization presents a new direction to further enhance ZT through nanostructuring.

Original language	English (US)
Title of host publication	Materials and Devices for Thermal-to-Electric Energy Conversion
Publisher	Materials Research Society
Pages	95-99
Number of pages	5
ISBN (Print)	9781605111391
DOIs	https://doi.org/10.1557/proc-1166-n04-07
State	Published - 2009
Event	2009 MRS Spring Meeting: Materials and Devices for Thermal-to-Electric Energy Conversion - San Francisco, CA, United States Duration: Apr 13 2009 → Apr 17 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1166
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting: Materials and Devices for Thermal-to-Electric Energy Conversion
Country/Territory	United States
City	San Francisco, CA
Period	4/13/09 → 4/17/09

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Online availability

10.1557/proc-1166-n04-07

Library availability

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Thermal transport in rough silicon nanowires for thermoelectric applications. / Sinha, Sanjiv; Budhaev, Bair; Majumdar, Arun.

Materials and Devices for Thermal-to-Electric Energy Conversion. Materials Research Society, 2009. p. 95-99 (Materials Research Society Symposium Proceedings; Vol. 1166).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sinha, S, Budhaev, B & Majumdar, A 2009, Thermal transport in rough silicon nanowires for thermoelectric applications. in Materials and Devices for Thermal-to-Electric Energy Conversion. Materials Research Society Symposium Proceedings, vol. 1166, Materials Research Society, pp. 95-99, 2009 MRS Spring Meeting: Materials and Devices for Thermal-to-Electric Energy Conversion, San Francisco, CA, United States, 4/13/09. https://doi.org/10.1557/proc-1166-n04-07

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AB - The coefficient of merit, ZT of nanostructured thermoelectric materials increases with reduction in thermal conductivity through phonon scattering. The ideal thermoelectric is considered to be an electron crystal and a phonon glass. This paper explores such a material concept by developing a theory for phonon localization in rough nanowires with crystalline cores. Results based on this theory suggest that the reported hundredfold decrease in thermal conductivity of rough silicon nanowires arises due to multiply scattered and localized phonons. Phonon localization presents a new direction to further enhance ZT through nanostructuring.

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Thermal transport in rough silicon nanowires for thermoelectric applications

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