Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991 Ge0.009

Gregory T. Hohensee, Michael R. Fellinger, Dallas R. Trinkle, David G. Cahill

Research output: Contribution to journalArticle

Abstract

Time-domain thermoreflectance (TDTR) can be applied to metallic samples at high pressures in the diamond anvil cell and provide noncontact measurements of thermal transport properties. We have performed regular and beam-offset TDTR to establish the thermal conductivities of Si and Si0.991Ge0.009 across the semiconductor-metal phase transition and up to 45 GPa. The thermal conductivities of metallic Si and Si(Ge) are comparable to aluminum and indicative of predominantly electronic heat carriers. Metallic Si and Si(Ge) have an anisotropy of approximately 1.4, similar to that of beryllium, due to the primitive hexagonal crystal structure. We used the Wiedemann-Franz law to derive the associated electrical resistivity, and found it consistent with the Bloch-Grüneisen model.

Original languageEnglish (US)
Article number205104
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number20
DOIs
StatePublished - May 7 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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