Abstract
Time-domain thermoreflectance (TDTR) can be applied to metallic samples at high pressures in the diamond anvil cell and provide noncontact measurements of thermal transport properties. We have performed regular and beam-offset TDTR to establish the thermal conductivities of Si and Si0.991Ge0.009 across the semiconductor-metal phase transition and up to 45 GPa. The thermal conductivities of metallic Si and Si(Ge) are comparable to aluminum and indicative of predominantly electronic heat carriers. Metallic Si and Si(Ge) have an anisotropy of approximately 1.4, similar to that of beryllium, due to the primitive hexagonal crystal structure. We used the Wiedemann-Franz law to derive the associated electrical resistivity, and found it consistent with the Bloch-Grüneisen model.
| Original language | English (US) |
|---|---|
| Article number | 205104 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 91 |
| Issue number | 20 |
| DOIs | |
| State | Published - May 7 2015 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991 Ge0.009. / Hohensee, Gregory T.; Fellinger, Michael R.; Trinkle, Dallas R.; Cahill, David G.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 20, 205104, 07.05.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991 Ge0.009
AU - Hohensee, Gregory T.
AU - Fellinger, Michael R.
AU - Trinkle, Dallas R.
AU - Cahill, David G.
PY - 2015/5/7
Y1 - 2015/5/7
N2 - Time-domain thermoreflectance (TDTR) can be applied to metallic samples at high pressures in the diamond anvil cell and provide noncontact measurements of thermal transport properties. We have performed regular and beam-offset TDTR to establish the thermal conductivities of Si and Si0.991Ge0.009 across the semiconductor-metal phase transition and up to 45 GPa. The thermal conductivities of metallic Si and Si(Ge) are comparable to aluminum and indicative of predominantly electronic heat carriers. Metallic Si and Si(Ge) have an anisotropy of approximately 1.4, similar to that of beryllium, due to the primitive hexagonal crystal structure. We used the Wiedemann-Franz law to derive the associated electrical resistivity, and found it consistent with the Bloch-Grüneisen model.
AB - Time-domain thermoreflectance (TDTR) can be applied to metallic samples at high pressures in the diamond anvil cell and provide noncontact measurements of thermal transport properties. We have performed regular and beam-offset TDTR to establish the thermal conductivities of Si and Si0.991Ge0.009 across the semiconductor-metal phase transition and up to 45 GPa. The thermal conductivities of metallic Si and Si(Ge) are comparable to aluminum and indicative of predominantly electronic heat carriers. Metallic Si and Si(Ge) have an anisotropy of approximately 1.4, similar to that of beryllium, due to the primitive hexagonal crystal structure. We used the Wiedemann-Franz law to derive the associated electrical resistivity, and found it consistent with the Bloch-Grüneisen model.
UR - http://www.scopus.com/inward/record.url?scp=84929587590&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84929587590&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.91.205104
DO - 10.1103/PhysRevB.91.205104
M3 - Article
AN - SCOPUS:84929587590
VL - 91
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 20
M1 - 205104
ER -