Thermal stability of GaAs solar cells for high temperature applications

Yukun Sun, Joseph Faucher, Daehwan Jung, Michelle Vaisman, Clay McPheeters, Paul Sharps, Emmett Perl, John Simon, Myles Steiner, Daniel Friedman, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66% were demonstrated for annealed cells tested at 400 °C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2385-2388
Number of pages4
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Externally publishedYes
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • GaAs
  • solar cells
  • thermal stability

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Thermal stability of GaAs solar cells for high temperature applications'. Together they form a unique fingerprint.

Cite this