Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

Keyphrases

• Boundary Temperature 100%
• Computer-aided Design Software 20%
• Conductive Substrate 20%
• Design Guidelines 20%
• Diamond 100%
• GaN Substrate 100%
• GaN-based 20%
• GaN-based Devices 20%
• Heat Dissipation 20%
• Heat Source 80%
• High Electron Mobility Transistor 20%
• High Power 20%
• High Thermal Conductivity 20%
• Hot Temperature 20%
• Localized Heating 20%
• Low Thermal Resistance 20%
• Power Dissipation 20%
• Resistance Heating 20%
• Resistance Optimization 100%
• Sapphire 20%
• Sapphire Substrate 20%
• Silicon Carbide 20%
• Silicon Carbide Substrate 20%
• Silicon Substrate 20%
• Submicron 20%
• Synopsys 20%
• Technology Computer-aided Design 20%
• Temperature Reduction 20%
• Temperature-dependent Thermal Conductivity 100%
• Thermal Boundary Resistance 100%
• Thermal Conductivity 40%
• Thermal Management Design 20%
• Thermal Resistance 100%

Engineering

• Computer-Aided Design Software 20%
• Conductive 20%
• Design Guideline 20%
• Diamond 100%
• Energy Dissipation 20%
• Heat Losses 20%
• Heat Source 80%
• Sapphire Substrate 20%
• Silicon Substrate 20%
• Temperature Increase 20%
• Thermal Conductivity 100%
• Thermal Resistance 100%

Material Science

• Diamond 100%
• Electron Mobility 20%
• Heat Resistance 100%
• Sapphire 40%
• Silicon 40%
• Silicon Carbide 40%
• Thermal Conductivity 100%
• Transistor 20%