Thermal resistance of VCSEL's bonded to integrated circuits

Rui Pu; Carl W. Wilmsen; Kent M. Geib; Kent D. Choquette

doi:10.1109/68.806844

Thermal resistance of VCSEL's bonded to integrated circuits

Rui Pu, Carl W. Wilmsen, Kent M. Geib, Kent D. Choquette

Research output: Contribution to journal › Article › peer-review

Abstract

The thermal resistance of vertical-cavity surface-emitting lasers (VCSEL's) flip chip bonded to GaAs substrates and CMOS integrated circuits has been measured. The measurements on GaAs show that if the bonding is done properly, the bonding does not add significantly to the thermal resistance. However, the SiO₂ under the CMOS bonding pad can double the thermal resistance unless measures are taken to improve the thermal conductance of these layers. Finite element simulations indicate that the thermal resistance of bonded VCSEL's increases rapidly as the solder bond size and the aperture size decrease below approximately 10 μm.

Original language	English (US)
Pages (from-to)	1554-1556
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1109/68.806844
State	Published - Dec 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.806844

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title = "Thermal resistance of VCSEL's bonded to integrated circuits",

abstract = "The thermal resistance of vertical-cavity surface-emitting lasers (VCSEL's) flip chip bonded to GaAs substrates and CMOS integrated circuits has been measured. The measurements on GaAs show that if the bonding is done properly, the bonding does not add significantly to the thermal resistance. However, the SiO2 under the CMOS bonding pad can double the thermal resistance unless measures are taken to improve the thermal conductance of these layers. Finite element simulations indicate that the thermal resistance of bonded VCSEL's increases rapidly as the solder bond size and the aperture size decrease below approximately 10 μm.",

author = "Rui Pu and Wilmsen, {Carl W.} and Geib, {Kent M.} and Choquette, {Kent D.}",

note = "Funding Information: Manuscript received August 12, 1999. This work was supported in part by the National Science Foundation under Grant ECS-9900493 and in part by Colorado State University under the Program of Research and Scholarly Excellence.",

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AU - Geib, Kent M.

AU - Choquette, Kent D.

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N2 - The thermal resistance of vertical-cavity surface-emitting lasers (VCSEL's) flip chip bonded to GaAs substrates and CMOS integrated circuits has been measured. The measurements on GaAs show that if the bonding is done properly, the bonding does not add significantly to the thermal resistance. However, the SiO2 under the CMOS bonding pad can double the thermal resistance unless measures are taken to improve the thermal conductance of these layers. Finite element simulations indicate that the thermal resistance of bonded VCSEL's increases rapidly as the solder bond size and the aperture size decrease below approximately 10 μm.

AB - The thermal resistance of vertical-cavity surface-emitting lasers (VCSEL's) flip chip bonded to GaAs substrates and CMOS integrated circuits has been measured. The measurements on GaAs show that if the bonding is done properly, the bonding does not add significantly to the thermal resistance. However, the SiO2 under the CMOS bonding pad can double the thermal resistance unless measures are taken to improve the thermal conductance of these layers. Finite element simulations indicate that the thermal resistance of bonded VCSEL's increases rapidly as the solder bond size and the aperture size decrease below approximately 10 μm.

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Thermal resistance of VCSEL's bonded to integrated circuits

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