Thermal phenomena in deeply scaled MOSFETs

Jeremy Rowlette, Eric Pop, Sanjiv Sinha, Mathew Panzer, Kenneth Goodson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thermal phenomena are having an increasing influence on drive and leakage currents in modern transistors. This trend is accelerated for confined-geometry devices, which include thermally-resistive interfaces and materials with low thermal conductivity (e.g. SiO2, Si1-xGex). This paper summarizes the nanotransistor thermal design challenges and reviews the latest advancements in electro-thermal modeling.

Original languageEnglish (US)
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages984-987
Number of pages4
StatePublished - Dec 1 2005
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: Dec 5 2005Dec 7 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period12/5/0512/7/05

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Rowlette, J., Pop, E., Sinha, S., Panzer, M., & Goodson, K. (2005). Thermal phenomena in deeply scaled MOSFETs. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 984-987). [1609527] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).