Thermal metrology of silicon microstructures using Raman spectroscopy

Mark R. Abel, Tanya L. Wright, Erik O. Sunden, Samuel Graham, William P. King, Michael J. Lance

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work, the effects of temperature and stress on the Raman shift in single crystal silicon and polycrystalline silicon films were calibrated. Polysilicon films were grown by LPCVD using a range of temperatures to produce amorphous and crystalline materials followed by doping and annealing. The dependencies of the linear coefficients were related to the polysilicon microstructure using AFM surface scans to determine any possible links. Finally, the technique was utilized in measuring the temperature distribution in a thermal MEMS cantilever device with micron spatial resolution.

Original languageEnglish (US)
Pages (from-to)235-242
Number of pages8
JournalAnnual IEEE Semiconductor Thermal Measurement and Management Symposium
StatePublished - Dec 6 2005
Externally publishedYes
Event21st Annual IEEE Semiconductor Thermal Measurement and Management Symposium - San Jose, CA, United States
Duration: Mar 15 2005Mar 17 2005

Keywords

  • MEMS
  • Microscale thermometry
  • Polycrystalline silicon
  • Raman spectroscopy

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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