Thermal conductivity of sputtered oxide films

S. M. Lee, David G. Cahill, Thomas H. Allen

Research output: Contribution to journalArticlepeer-review

Abstract

The thermal conductivity of oxide thin films deposited using dc, rf, and ion-beam sputtering is measured in the temperature range 80400 K using the 3 method. Thermal conductivity data for amorphous thin films of SiO2 are nearly identical to bulk a-SiO2. Data for amorphous Al2O3, while having a magnitude and temperature dependence similar to bulk amorphous oxides, show a dependence on deposition method; rf sputtering of an Al2O3 target produces films with a thermal conductivity 35% smaller than films prepared by ion-beam sputtering. Microcrystalline thin films show a rich variety of behavior: the conductivity of TiO2 films depends on the substrate tempreature Ts and approaches the thermal conductivity of bulk TiO2 ceramics when Ts 400°C; HfO2 films show glasslike thermal conductivity independent of annealing temperature up to 900°C; and MgO films display a crystalline thermal conductivity that is greatly reduced relative bulk values.

Original languageEnglish (US)
Pages (from-to)253-257
Number of pages5
JournalPhysical Review B
Volume52
Issue number1
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Condensed Matter Physics

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