Abstract
The thermal conductivity of oxide thin films deposited using dc, rf, and ion-beam sputtering is measured in the temperature range 80400 K using the 3 method. Thermal conductivity data for amorphous thin films of SiO2 are nearly identical to bulk a-SiO2. Data for amorphous Al2O3, while having a magnitude and temperature dependence similar to bulk amorphous oxides, show a dependence on deposition method; rf sputtering of an Al2O3 target produces films with a thermal conductivity 35% smaller than films prepared by ion-beam sputtering. Microcrystalline thin films show a rich variety of behavior: the conductivity of TiO2 films depends on the substrate tempreature Ts and approaches the thermal conductivity of bulk TiO2 ceramics when Ts 400°C; HfO2 films show glasslike thermal conductivity independent of annealing temperature up to 900°C; and MgO films display a crystalline thermal conductivity that is greatly reduced relative bulk values.
Original language | English (US) |
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Pages (from-to) | 253-257 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 52 |
Issue number | 1 |
DOIs | |
State | Published - 1995 |
ASJC Scopus subject areas
- Condensed Matter Physics