Thermal conductivity of a-Si:H thin films

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Abstract

The thermal conductivity of sputtered a-Si:H thin films for a hydrogen content of 1-20 % and a film thickness of 0.2-1.5 μm is determined in the temperature range 80-400 K using an extension of the 3ω measurement technique. The reliability of the method is demonstrated on 1-μm-thick a-SiO2 thermally grown on Si. Scattering of phonons at the interface between the a-Si:H film and the substrate places a simple upper limit on the heat transport by long-wavelength phonons and facilitates the comparison of the experimental data to recent numerical solutions of a Kubo formula using harmonic vibrations.

Original languageEnglish (US)
Pages (from-to)6077-6081
Number of pages5
JournalPhysical Review B
Volume50
Issue number9
DOIs
StatePublished - 1994

ASJC Scopus subject areas

  • Condensed Matter Physics

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