Abstract
The thermal conductivity of sputtered a-Si:H thin films for a hydrogen content of 1-20 % and a film thickness of 0.2-1.5 μm is determined in the temperature range 80-400 K using an extension of the 3ω measurement technique. The reliability of the method is demonstrated on 1-μm-thick a-SiO2 thermally grown on Si. Scattering of phonons at the interface between the a-Si:H film and the substrate places a simple upper limit on the heat transport by long-wavelength phonons and facilitates the comparison of the experimental data to recent numerical solutions of a Kubo formula using harmonic vibrations.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6077-6081 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 50 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1994 |
ASJC Scopus subject areas
- Condensed Matter Physics