Thermal conductivity as a metric for the crystalline quality of SrTiO 3 epitaxial layers

Dong Wook Oh, Jayakanth Ravichandran, Chen Wei Liang, Wolter Siemons, Bharat Jalan, Charles M. Brooks, Mark Huijben, Darrell G. Schlom, Susanne Stemmer, Lane W. Martin, Arun Majumdar, Ramamoorthy Ramesh, David G. Cahill

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Abstract

Measurements of thermal conductivity by time-domain thermoreflectance in the temperature range 100<T<300 K are used to characterize the crystalline quality of epitaxial layers of a prototypical oxide, SrTiO3. Twenty samples from five institutions using two growth techniques, molecular beam epitaxy and pulsed laser deposition (PLD), were analyzed. Optimized growth conditions produce layers with comparable to bulk single crystals. Many PLD layers, particularly those that use ceramics as the target material, show surprisingly low . For homoepitaxial layers, the decrease in created by point defects correlates well with the expansion of the lattice parameter in the direction normal to the surface.

Original languageEnglish (US)
Article number221904
JournalApplied Physics Letters
Volume98
Issue number22
DOIs
StatePublished - May 30 2011

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Oh, D. W., Ravichandran, J., Liang, C. W., Siemons, W., Jalan, B., Brooks, C. M., Huijben, M., Schlom, D. G., Stemmer, S., Martin, L. W., Majumdar, A., Ramesh, R., & Cahill, D. G. (2011). Thermal conductivity as a metric for the crystalline quality of SrTiO 3 epitaxial layers. Applied Physics Letters, 98(22), [221904]. https://doi.org/10.1063/1.3579993